NTJS315

NTJS3151PT1G vs NTJS3151PT2G vs NTJS3151PT2

 
PartNumberNTJS3151PT1GNTJS3151PT2GNTJS3151PT2
DescriptionMOSFET 12V 3.3A P-ChannelMOSFET P-CH 12V 2.7A SOT-363MOSFET P-CH 12V 2.7A SOT-363
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSC-88-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current3.3 A--
Rds On Drain Source Resistance133 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation625 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.9 mm--
Length2 mm--
ProductMOSFET Small Signal--
SeriesNTJS3151P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.25 mm--
BrandON Semiconductor--
Forward Transconductance Min15 S--
Fall Time1.5 ns--
Product TypeMOSFET--
Rise Time1.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time3.5 ns--
Typical Turn On Delay Time0.86 ns--
Produttore Parte # Descrizione RFQ
ON Semiconductor
ON Semiconductor
NTJS3157NT1G MOSFET 20V 4A N-Channel
NTJS3151PT1G MOSFET 12V 3.3A P-Channel
NTJS3151PT1G MOSFET P-CH 12V 2.7A SOT-363
NTJS3151PT2G MOSFET P-CH 12V 2.7A SOT-363
NTJS3157NT1G Nuovo e originale
NTJS3157NT2G MOSFET N-CH 20V 3.2A SOT-363
NTJS3157NT4 MOSFET N-CH 20V 3.2A SOT-363
NTJS3151PT2 MOSFET P-CH 12V 2.7A SOT-363
NTJS3157NT2 MOSFET N-CH 20V 3.2A SOT-363
NTJS3157NT4G MOSFET N-CH 20V 3.2A SOT-363
NTJS31519T1G Nuovo e originale
NTJS3151P Nuovo e originale
NTJS3151P1TG Nuovo e originale
NTJS3151PT1/TJX Nuovo e originale
NTJS3157N Nuovo e originale
NTJS3157NT Nuovo e originale
NTJS3157PT1G Nuovo e originale
NTJS3159PT1G Nuovo e originale
NTJS315PT1G Nuovo e originale
NTJS3151PT1G-CUT TAPE Nuovo e originale
NTJS3157NT1G-CUT TAPE Nuovo e originale
NTJS3151PT1 MOSFET 12V 3.3A P-Channel
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