NTB30N2 stock, NTB30N2, NTB30N20G


PartNumber	NTB30N20G	NTB30N20T4G	NTB30N20
Description	MOSFET 200V 30A N-Channel	MOSFET 200V 30A N-Channel	MOSFET N-CH 200V 30A D2PAK
Manufacturer	ON Semiconductor	ON Semiconductor	MOT
Product Category	MOSFET	MOSFET	FETs - Single
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	TO-263-3	TO-263-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	200 V	200 V	-
Id Continuous Drain Current	30 A	30 A	-
Rds On Drain Source Resistance	68 mOhms	68 mOhms	-
Vgs Gate Source Voltage	30 V	30 V	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 175 C	-
Pd Power Dissipation	214 W	214 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Tube	Reel	-
Height	4.83 mm	4.83 mm	-
Length	10.29 mm	10.29 mm	-
Transistor Type	1 N-Channel	1 N-Channel	-
Type	MOSFET	MOSFET	-
Width	9.65 mm	9.65 mm	-
Brand	ON Semiconductor	ON Semiconductor	-
Forward Transconductance Min	20 S	20 S	-
Fall Time	24 ns, 88 ns	24 ns, 88 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	20 ns, 70 ns	20 ns, 70 ns	-
Factory Pack Quantity	50	800	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	40 ns, 82 ns	40 ns, 82 ns	-
Typical Turn On Delay Time	10 ns, 12 ns	10 ns, 12 ns	-
Unit Weight	0.139332 oz	0.139332 oz	-

Search Part Number : "NTB30N2", Match & Start with "NTB30N2" - Total : 6

Produttore	Parte #	Descrizione
ON Semiconductor	NTB30N20G	MOSFET 200V 30A N-Channel
	NTB30N20T4G	MOSFET 200V 30A N-Channel
	NTB30N20	MOSFET N-CH 200V 30A D2PAK
	NTB30N20G	MOSFET N-CH 200V 30A D2PAK
	NTB30N20T4G	MOSFET N-CH 200V 30A D2PAK
	NTB30N20T4	MOSFET 200V 30A N-Channel

NTB30N2