| PartNumber | NSVT65011MW6T1G | NSVT65010MW6T1G | NSVT489AMT1G |
| Description | Bipolar Transistors - BJT Dual Matched NPN Tra | Bipolar Transistors - BJT Dual Matched PNP Tra | Bipolar Transistors - BJT SS TSOP-6 NPN 30V |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Transistor Polarity | NPN | PNP | NPN |
| Configuration | Dual | Dual | Single |
| Collector Emitter Voltage VCEO Max | 65 V | - 65 V | - |
| Collector Base Voltage VCBO | 80 V | - 80 V | - |
| Emitter Base Voltage VEBO | 6 V | - 5 V | - |
| Collector Emitter Saturation Voltage | 600 mV | - 300 mV | - |
| Maximum DC Collector Current | 100 mA | - 100 mA | 2 A |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Pd Power Dissipation | 380 mW | 380 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Series | - | - | NST489 |
| Pd Power Dissipation | - | - | 1.18 W |
| Collector Emitter Voltage VCEO Max | - | - | 30 V |
| Collector Base Voltage VCBO | - | - | 50 V |
| Emitter Base Voltage VEBO | - | - | 5 V |
| DC Collector Base Gain hfe Min | - | - | 300 at 1 mA at 5 V 300 at 0.5 A at 5 V 200 at 1 A at 5 V |