NSVT65010MW6T1G

NSVT65010MW6T1G
Mfr. #:
NSVT65010MW6T1G
Produttore:
ON Semiconductor
Descrizione:
Bipolar Transistors - BJT Dual Matched PNP Tra
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NSVT65010MW6T1G Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NSVT65010MW6T1G DatasheetNSVT65010MW6T1G Datasheet (P4-P5)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SOT-363-6
Polarità del transistor:
PNP
Configurazione:
Dual
Tensione collettore-emettitore VCEO Max:
- 65 V
Collettore-tensione di base VCBO:
- 80 V
Emettitore-tensione di base VEBO:
- 5 V
Tensione di saturazione collettore-emettitore:
- 300 mV
Corrente massima del collettore CC:
- 100 mA
Guadagno larghezza di banda prodotto fT:
100 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Bobina
Marca:
ON Semiconductor
Pd - Dissipazione di potenza:
380 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Qualificazione:
AEC-Q101
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Unità di peso:
0.000265 oz
Tags
NSVT, NSV
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans GP BJT PNP 65V 0.1A 380mW Automotive 6-Pin SOT-363 T/R
***et
Trans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R
***Components
BJT PNP MATCHED PAIR 65V 0.1A SOT-363
***Semiconductor
DUAL MATCHED PNP XSTR 65V
***i-Key
TRANS 2PNP 65V 0.1A SC88-6
***ark
Trans, Dual Pnp, -65V, Sot-363; Transistor Polarity:dual Pnp; Collector Emitter Voltage V(Br)Ceo:-65V; Power Dissipation Pd:380Mw; Dc Collector Current:-100Ma; Dc Current Gain Hfe:0.9Hfe; Transistor Case Style:sot-363; No. Of Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. TRANS, DUAL PNP, -65V, SOT-363; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:380mW; DC Collector Current:-100mA; DC Current Gain hFE:0.9hFE; Transistor Case Style:SOT-363; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
TRANS. DOPPIO PNP, -65V, SOT-363; Polarità Transistor:PNP Doppio; Tensione Collettore-Emettitore V(br)ceo:-65V; Dissipazione di Potenza Pd:380mW; Corrente di Collettore CC:-100mA; Guadagno di Corrente CC hFE:0.9hFE; Modello Case Transistor:SOT-363; No. di Pin:6Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
NSVT65010MW6T1G
DISTI # V72:2272_14070799
ON SemiconductorTrans GP BJT PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant
1980
  • 1000:$0.0921
  • 500:$0.0980
  • 250:$0.1088
  • 100:$0.1209
  • 25:$0.2891
  • 10:$0.2967
  • 1:$0.4284
NSVT65010MW6T1G
DISTI # V36:1790_14070799
ON SemiconductorTrans GP BJT PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant
0
  • 6000000:$0.0582
  • 3000000:$0.0583
  • 600000:$0.0684
  • 60000:$0.0906
  • 6000:$0.0945
NSVT65010MW6T1G
DISTI # NSVT65010MW6T1GOSCT-ND
ON SemiconductorTRANS 2PNP 65V 0.1A SC88-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$0.1081
  • 500:$0.1406
  • 100:$0.2055
  • 10:$0.3300
  • 1:$0.4400
NSVT65010MW6T1G
DISTI # NSVT65010MW6T1GOSDKR-ND
ON SemiconductorTRANS 2PNP 65V 0.1A SC88-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$0.1081
  • 500:$0.1406
  • 100:$0.2055
  • 10:$0.3300
  • 1:$0.4400
NSVT65010MW6T1G
DISTI # NSVT65010MW6T1GOSTR-ND
ON SemiconductorTRANS 2PNP 65V 0.1A SC88-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 75000:$0.0700
  • 30000:$0.0761
  • 15000:$0.0814
  • 6000:$0.0892
  • 3000:$0.0945
NSVT65010MW6T1G
DISTI # 25805741
ON SemiconductorTrans GP BJT PNP 65V 0.1A Automotive 6-Pin SOT-363 T/R
RoHS: Compliant
1980
  • 89:$0.4284
NSVT65010MW6T1G
DISTI # NSVT65010MW6T1G
ON SemiconductorTrans GP BJT PNP 65V 0.1A 6-Pin SOT-363 T/R - Tape and Reel (Alt: NSVT65010MW6T1G)
RoHS: Compliant
Min Qty: 12000
Container: Reel
Americas - 0
  • 120000:$0.0609
  • 60000:$0.0629
  • 24000:$0.0639
  • 36000:$0.0639
  • 12000:$0.0649
NSVT65010MW6T1G
DISTI # 75Y1887
ON SemiconductorTRANS, DUAL PNP, -65V, SOT-363,Transistor Polarity:Dual PNP,Collector Emitter Voltage V(br)ceo:-65V,Power Dissipation Pd:380mW,DC Collector Current:-100mA,DC Current Gain hFE:0.9hFE,Transistor Case Style:SOT-363,No. of RoHS Compliant: Yes2791
  • 1000:$0.1010
  • 500:$0.1110
  • 250:$0.1220
  • 100:$0.1320
  • 50:$0.1840
  • 25:$0.2350
  • 10:$0.2870
  • 1:$0.4140
NSVT65010MW6T1G
DISTI # 68Y0594
ON SemiconductorDUAL MATCHED PNP XSTR 65V / REEL0
  • 9000:$0.0810
  • 3000:$0.0880
  • 1000:$0.1030
  • 500:$0.1260
  • 250:$0.1300
  • 100:$0.1340
  • 50:$0.2780
  • 1:$0.4760
NSVT65010MW6T1G
DISTI # 863-NSVT65010MW6T1G
ON SemiconductorBipolar Transistors - BJT Dual Matched PNP Tra
RoHS: Compliant
4977
  • 1:$0.4100
  • 10:$0.2840
  • 100:$0.1310
  • 1000:$0.1000
  • 3000:$0.0860
  • 9000:$0.0780
  • 24000:$0.0730
NSVT65010MW6T1GON SemiconductorSMALL SIGNAL BIPOLAR TRANSISTOR1487
  • 371:$0.1080
  • 57:$0.1350
  • 1:$0.2400
NSVT65010MW6T1G
DISTI # 2508353RL
ON SemiconductorTRANS, DUAL PNP, -65V, SOT-363
RoHS: Compliant
0
  • 24000:$0.1100
  • 9000:$0.1180
  • 3000:$0.1300
  • 1000:$0.1510
  • 100:$0.1970
  • 10:$0.4280
  • 1:$0.6180
NSVT65010MW6T1G
DISTI # 2508353
ON SemiconductorTRANS, DUAL PNP, -65V, SOT-363
RoHS: Compliant
2791
  • 24000:$0.1100
  • 9000:$0.1180
  • 3000:$0.1300
  • 1000:$0.1510
  • 100:$0.1970
  • 10:$0.4280
  • 1:$0.6180
NSVT65010MW6T1GON SemiconductorPNP Dual General Purpose Transistors2350
  • 1:$0.1200
  • 100:$0.1000
  • 500:$0.0800
  • 1000:$0.0800
NSVT65010MW6T1G
DISTI # 2508353
ON SemiconductorTRANS, DUAL PNP, -65V, SOT-3632801
  • 500:£0.0797
  • 250:£0.0960
  • 100:£0.1010
  • 25:£0.2280
  • 5:£0.2490
Immagine Parte # Descrizione
TLC271BCDR

Mfr.#: TLC271BCDR

OMO.#: OMO-TLC271BCDR

Operational Amplifiers - Op Amps Programmable Lo-Pwr Op Amp
TLC271IP

Mfr.#: TLC271IP

OMO.#: OMO-TLC271IP

Operational Amplifiers - Op Amps Low Pwr Programmable
INA168QDBVRQ1

Mfr.#: INA168QDBVRQ1

OMO.#: OMO-INA168QDBVRQ1

Current & Power Monitors & Regulators AC Hi-Side Msmt Crnt Shunt Mon
NSVT65011MW6T1G

Mfr.#: NSVT65011MW6T1G

OMO.#: OMO-NSVT65011MW6T1G

Bipolar Transistors - BJT Dual Matched NPN Tra
NST65011MW6T1G

Mfr.#: NST65011MW6T1G

OMO.#: OMO-NST65011MW6T1G

Bipolar Transistors - BJT Dual MatchedNPN Tra
MCH6541-TL-E

Mfr.#: MCH6541-TL-E

OMO.#: OMO-MCH6541-TL-E

Bipolar Transistors - BJT 2.5/3.3V 4:1 DIFF MUX
INA168QDBVRQ1

Mfr.#: INA168QDBVRQ1

OMO.#: OMO-INA168QDBVRQ1-TEXAS-INSTRUMENTS

Current & Power Monitors & Regulators AC Hi-Side Msmt Crnt Shunt Mon
TLC271BCDR

Mfr.#: TLC271BCDR

OMO.#: OMO-TLC271BCDR-TEXAS-INSTRUMENTS

Operational Amplifiers - Op Amps Programmable Lo-Pwr Op Amp
TLC271IP

Mfr.#: TLC271IP

OMO.#: OMO-TLC271IP-TEXAS-INSTRUMENTS

Operational Amplifiers - Op Amps Low Pwr Programmable
214-3339-00-0602J

Mfr.#: 214-3339-00-0602J

OMO.#: OMO-214-3339-00-0602J-3M

IC & Component Sockets 0.100" DIP SOCKET 14 Contact Qty.
Disponibilità
Azione:
Available
Su ordine:
1987
Inserisci la quantità:
Il prezzo attuale di NSVT65010MW6T1G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,41 USD
0,41 USD
10
0,28 USD
2,84 USD
100
0,13 USD
13,10 USD
1000
0,10 USD
100,00 USD
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