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| PartNumber | NSS40301MDR2G | NSS40301MDR2G PBSS4350 | NSS40301MDR2G-CUT TAPE |
| Description | Bipolar Transistors - BJT MATCHED LO VCE(SAT) SOIC8 | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOIC-Narrow-8 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 3 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSS40301MD | - | - |
| DC Current Gain hFE Max | 200 at 10 mA, 2 V | - | - |
| Height | 1.5 mm | - | - |
| Length | 5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 4 mm | - | - |
| Brand | ON Semiconductor | - | - |
| DC Collector/Base Gain hfe Min | 200 at 10 mA, 2 V, 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 180 at 2 A, 2 V | - | - |
| Pd Power Dissipation | 783 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.005044 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
| NSS40301MDR2G | Bipolar Transistors - BJT MATCHED LO VCE(SAT) SOIC8 | ||
| NSS40301MDR2G PBSS4350 | Nuovo e originale | ||
| NSS40301MDR2G-CUT TAPE | Nuovo e originale | ||
ON Semiconductor |
NSS40301MDR2G | Bipolar Transistors - BJT MATCHED LO VCE(SAT) SOIC8 |