KSB1116A

KSB1116AGBU vs KSB1116AGTA vs KSB1116ALBU

 
PartNumberKSB1116AGBUKSB1116AGTAKSB1116ALBU
DescriptionBipolar Transistors - BJT PNP Epitaxial SilBipolar Transistors - BJT PNP Epitaxial SilTRANS PNP 60V 1A TO-92
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3TO-92-3 Kinked Lead-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 60 V- 60 V-
Collector Base Voltage VCBO- 80 V- 80 V-
Emitter Base Voltage VEBO- 6 V- 6 V-
Collector Emitter Saturation Voltage- 0.2 V- 0.2 V-
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT120 MHz120 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesKSB1116AKSB1116A-
DC Current Gain hFE Max400400-
Height5.33 mm4.7 mm-
Length5.2 mm4.7 mm-
PackagingBulkAmmo Pack-
Width4.19 mm3.93 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Continuous Collector Current- 1 A- 1 A-
DC Collector/Base Gain hfe Min135135-
Pd Power Dissipation750 mW750 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10002000-
SubcategoryTransistorsTransistors-
Unit Weight0.006286 oz0.008466 oz-
Part # Aliases-KSB1116AGTA_NL-
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
KSB1116AGBU Bipolar Transistors - BJT PNP Epitaxial Sil
KSB1116ALTA Bipolar Transistors - BJT PNP Epitaxial Transistor
KSB1116AGTA Bipolar Transistors - BJT PNP Epitaxial Sil
ON Semiconductor
ON Semiconductor
KSB1116ALBU TRANS PNP 60V 1A TO-92
KSB1116AYBU TRANS PNP 60V 1A TO-92
KSB1116AGBU TRANS PNP 60V 1A TO-92
KSB1116AGTA TRANS PNP 60V 1A TO-92
KSB1116ALTA TRANS PNP 60V 1A TO-92
KSB1116AYTA TRANS PNP 60V 1A TO-92
KSB1116A Nuovo e originale
KSB1116A-GR Nuovo e originale
KSB1116A-Y Nuovo e originale
KSB1116A-YBU Nuovo e originale
KSB1116AY Nuovo e originale
KSB1116AYTA_NL Nuovo e originale
Top