![]() | ![]() | ||
| PartNumber | Jan2N2369AUA | Jan2N2369AUA/TR | Jan2N2369AUB |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT Small-Signal BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Packaging | Waffle | - | Waffle |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | LCC-4 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Single | - |
| Collector Emitter Voltage VCEO Max | - | 15 V | - |
| Collector Base Voltage VCBO | - | 40 V | - |
| Emitter Base Voltage VEBO | - | 4.5 V | - |
| Collector Emitter Saturation Voltage | - | 0.2 V | - |
| Maximum DC Collector Current | - | 0.1 A | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Maximum Operating Temperature | - | + 200 C | - |
| DC Current Gain hFE Max | - | 120 at 100 mA, 1 V | - |
| DC Collector/Base Gain hfe Min | - | 20 at 100 mA, 1 V | - |
| Pd Power Dissipation | - | 0.36 W | - |