IXGT16

IXGT16N170A vs IXGT16N170 vs IXGT16N170AH1

 
PartNumberIXGT16N170AIXGT16N170IXGT16N170AH1
DescriptionIGBT Transistors 32 Amps 1700 V 5 V RdsIGBT Transistors 32 Amps 1700 V 3.5 V RdsIGBT Transistors 11 Amps 1700V 5 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-268-3TO-268-3-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1.7 kV1.7 kV-
Collector Emitter Saturation Voltage4.2 V2.7 V5 V
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C16 A32 A-
Pd Power Dissipation190 W190 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXGT16N170IXGT16N170IXGT16N170
PackagingTubeTubeBulk
Continuous Collector Current Ic Max40 A80 A-
Height5.1 mm5.1 mm-
Length16.05 mm16.05 mm-
Operating Temperature Range- 55 C to + 150 C- 55 C to + 150 C-
Width14 mm14 mm-
BrandIXYSIXYS-
Continuous Collector Current16 A32 A-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.158733 oz0.158733 oz0.158733 oz
Package Case--TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--TO-268
Power Max--190W
Reverse Recovery Time trr--230ns
Current Collector Ic Max--16A
Voltage Collector Emitter Breakdown Max--1700V
IGBT Type--NPT
Current Collector Pulsed Icm--40A
Vce on Max Vge Ic--5V @ 15V, 11A
Switching Energy--900μJ (off)
Gate Charge--65nC
Td on off 25°C--36ns/160ns
Test Condition--850V, 16A, 10 Ohm, 15V
Produttore Parte # Descrizione RFQ
Littelfuse
Littelfuse
IXGT16N170A IGBT Transistors 32 Amps 1700 V 5 V Rds
IXGT16N170 IGBT Transistors 32 Amps 1700 V 3.5 V Rds
IXGT16N170AH1 IGBT Transistors 11 Amps 1700V 5 Rds
IXGT16N170A IGBT Transistors 32 Amps 1700 V 5 V Rds
IXGT16N170 IGBT Transistors 32 Amps 1700 V 3.5 V Rds
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