| PartNumber | IXGT10N170 | IXGT10N170A | IXGT15N120B |
| Description | IGBT Transistors 20 Amps 1700 V 4 V Rds | IGBT Transistors 20 Amps 1700 V 7 V Rds | IGBT Transistors 30 Amps 1200V 3.2 Rds |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-268-3 | TO-268-3 | TO-268-3 |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.7 kV | 1.7 kV | 1200 V |
| Collector Emitter Saturation Voltage | 2.7 V | 4.5 V | 3.2 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 20 A | 10 A | - |
| Pd Power Dissipation | 110 W | 140 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | IXGT10N170 | IXGT10N170 | IXGT15N120 |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 70 A | 20 A | 30 A |
| Height | 5.1 mm | 5.1 mm | 5.1 mm |
| Length | 16.05 mm | 16.05 mm | 16.05 mm |
| Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C | - |
| Width | 14 mm | 14 mm | 14 mm |
| Brand | IXYS | IXYS | IXYS |
| Continuous Collector Current | 20 A | 10 A | 30 A |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.158733 oz | 0.158733 oz | 0.158733 oz |