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| PartNumber | IXFZ520N075T2 | IXFZ140N25T | IXFZ67N10(A) |
| Description | MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET | MOSFET DISCMSFT NCHTRENCHGATE-GEN1 DE | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DE-475-6 | DE-475-6 | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 75 V | 250 V | - |
| Id Continuous Drain Current | 465 A | 100 A | - |
| Rds On Drain Source Resistance | 1.3 mOhms | 17 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 545 nC | 255 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Pd Power Dissipation | 600 W | 445 W | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | Tube | - |
| Height | 3.18 mm | 3.18 mm | - |
| Length | 23.11 mm | 23.11 mm | - |
| Series | IXFZ520N075 | - | - |
| Type | TrenchT2 GigaMOS HiperFET Power MOSFET | - | - |
| Width | 21.08 mm | 18.8 mm | - |
| Brand | IXYS | IXYS | - |
| Forward Transconductance Min | 95 S | 80 S | - |
| Fall Time | 35 ns | 22 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 36 ns | 29 ns | - |
| Factory Pack Quantity | 20 | 20 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 80 ns | 92 ns | - |
| Typical Turn On Delay Time | 48 ns | 33 ns | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Unit Weight | - | 0.105822 oz | - |