IXFZ

IXFZ520N075T2 vs IXFZ140N25T vs IXFZ67N10(A)

 
PartNumberIXFZ520N075T2IXFZ140N25TIXFZ67N10(A)
DescriptionMOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFETMOSFET DISCMSFT NCHTRENCHGATE-GEN1 DE
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDE-475-6DE-475-6-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage75 V250 V-
Id Continuous Drain Current465 A100 A-
Rds On Drain Source Resistance1.3 mOhms17 mOhms-
Vgs th Gate Source Threshold Voltage4 V2.5 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge545 nC255 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Pd Power Dissipation600 W445 W-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height3.18 mm3.18 mm-
Length23.11 mm23.11 mm-
SeriesIXFZ520N075--
TypeTrenchT2 GigaMOS HiperFET Power MOSFET--
Width21.08 mm18.8 mm-
BrandIXYSIXYS-
Forward Transconductance Min95 S80 S-
Fall Time35 ns22 ns-
Product TypeMOSFETMOSFET-
Rise Time36 ns29 ns-
Factory Pack Quantity2020-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time80 ns92 ns-
Typical Turn On Delay Time48 ns33 ns-
Number of Channels-1 Channel-
Configuration-Single-
Transistor Type-1 N-Channel-
Unit Weight-0.105822 oz-
Produttore Parte # Descrizione RFQ
Littelfuse
Littelfuse
IXFZ520N075T2 MOSFET TrenchT2 HiperFETs Gate TrenchT2 MOSFET
IXFZ140N25T MOSFET DISCMSFT NCHTRENCHGATE-GEN1 DE
IXFZ140N25T MOSFET N-CH 250V 100A DE475
IXFZ520N075T2 MOSFET N-CH 75V 465A DE-475
IXFZ67N10(A) Nuovo e originale
Top