| PartNumber | IXFN38N100P | IXFN38N80Q2 |
| Description | MOSFET 38 Amps 1000V | MOSFET 38 Amps 800V 0.22 Rds |
| Manufacturer | IXYS | IXYS |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Chassis Mount | Chassis Mount |
| Package / Case | SOT-227-4 | SOT-227-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 800 V |
| Id Continuous Drain Current | 38 A | 38 A |
| Rds On Drain Source Resistance | 210 mOhms | 220 mOhms |
| Vgs Gate Source Voltage | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 1 kW | 735 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | HiPerFET | HyperFET |
| Packaging | Tube | Tube |
| Height | 9.6 mm | - |
| Length | 38.23 mm | - |
| Series | IXFN38N100 | IXFN38N80 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 25.42 mm | - |
| Brand | IXYS | IXYS |
| Fall Time | 40 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 55 ns | 16 ns |
| Factory Pack Quantity | 10 | 10 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 71 ns | 60 ns |
| Typical Turn On Delay Time | 74 ns | 20 ns |
| Unit Weight | 1.058219 oz | 1.058219 oz |