IRF5803D

IRF5803D2TRPBF vs IRF5803D2PBF vs IRF5803D2TRPBF.

 
PartNumberIRF5803D2TRPBFIRF5803D2PBFIRF5803D2TRPBF.
DescriptionMOSFET MOSFT PCh w/Schttky -3.4A 112mOhm 25nCMOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current3.4 A3.4 A-
Rds On Drain Source Resistance190 mOhms190 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge25 nC25 nC-
Pd Power Dissipation2 W2 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
Transistor Type1 P-Channel1 P-Channel-
Width3.9 mm3.9 mm-
BrandInfineon / IRInfineon / IR-
Product TypeMOSFETMOSFET-
Factory Pack Quantity400095-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001554068SP001554058-
Unit Weight0.019048 oz0.019048 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Type-FETKY MOSFET & Schottky Diode-
Fall Time-50 ns-
Rise Time-550 ns-
Typical Turn Off Delay Time-88 ns-
Typical Turn On Delay Time-43 ns-
Produttore Parte # Descrizione RFQ
Infineon / IR
Infineon / IR
IRF5803D2TRPBF MOSFET MOSFT PCh w/Schttky -3.4A 112mOhm 25nC
IRF5803D2PBF MOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS
IRF5803D2TRPBF. Nuovo e originale
IRF5803DZ Nuovo e originale
Infineon Technologies
Infineon Technologies
IRF5803D2 MOSFET P-CH 40V 3.4A 8-SOIC
IRF5803D2PBF MOSFET P-CH 40V 3.4A 8-SOIC
IRF5803D2TR MOSFET P-CH 40V 3.4A 8-SOIC
IRF5803D2TRPBF MOSFET P-CH 40V 3.4A 8-SOIC
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