 |  | | |
| PartNumber | IRF5802TRPBF | IRF5802 | IRF5802TR |
| Description | MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC | MOSFET N-CH 150V 900MA 6TSOP | MOSFET N-CH 150V 0.9A 6-TSOP |
| Manufacturer | Infineon | IR | IR |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 900 mA | - | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 5.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 4.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 1.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 0.55 S | - | - |
| Fall Time | 9.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 1.6 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 7.5 ns | - | - |
| Typical Turn On Delay Time | 6 ns | - | - |
| Part # Aliases | SP001561828 | - | - |
| Unit Weight | 0.000705 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF5802TRPBF | MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC | |
| IRF5802 | MOSFET N-CH 150V 900MA 6TSOP | ||
| IRF5802TR | MOSFET N-CH 150V 0.9A 6-TSOP | ||
| IRF5802TRPBF | MOSFET N-CH 150V 0.9A 6-TSOP | ||
| IRF5802TRPBF-CUT TAPE | Nuovo e originale | ||
| IRF5802D2TRPBF | Nuovo e originale | ||
| IRF5802TRPBF,IRF5802PBF, | Nuovo e originale | ||
| IRF5802TRPBF. | Nuovo e originale |