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| PartNumber | IPT059N15N3 | IPT059N15N3ATMA1 | IPT059N15N3(SP001100162) |
| Description | MOSFET MV POWER MOS | MOSFET MV POWER MOS | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-HSOF-8 | PG-HSOF-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
| Id Continuous Drain Current | 155 A | 155 A | - |
| Rds On Drain Source Resistance | 5.9 mOhms | 5.9 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 69 nC | 69 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 375 W | 375 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 2.4 mm | 2.4 mm | - |
| Length | 10.58 mm | 10.58 mm | - |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 10.1 mm | 10.1 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 86 S | 86 S | - |
| Fall Time | 14 ns | 14 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 35 ns | 35 ns | - |
| Factory Pack Quantity | 2000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 46 ns | 46 ns | - |
| Typical Turn On Delay Time | 25 ns | 25 ns | - |
| Part # Aliases | IPT059N15N3ATMA1 SP001100162 | IPT059N15N3 SP001100162 | - |
| Unit Weight | - | 0.002293 oz | - |