IPD60R600C6 stock, IPD60R600C6, IPD60R600C6ATMA1


PartNumber	IPD60R600C6ATMA1	IPD60R600C6BTMA1
Description	MOSFET N-Ch 600V 20.2A DPAK-2	MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C6
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V
Id Continuous Drain Current	7.3 A	7.3 A
Rds On Drain Source Resistance	540 mOhms	540 mOhms
Vgs th Gate Source Threshold Voltage	2.5 V	2.5 V
Vgs Gate Source Voltage	20 V	20 V
Qg Gate Charge	20.5 nC	20.5 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Pd Power Dissipation	63 W	63 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	CoolMOS	-
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Series	CoolMOS C6	XPD60R600
Transistor Type	1 N-Channel	1 N-Channel
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon Technologies
Fall Time	13 ns	13 ns
Product Type	MOSFET	MOSFET
Rise Time	9 ns	9 ns
Factory Pack Quantity	2500	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	80 ns	80 ns
Typical Turn On Delay Time	12 ns	12 ns
Part # Aliases	IPD60R600C6 SP001117726	IPD60R600C6 IPD60R600C6XT SP000660622
Unit Weight	0.139332 oz	0.011993 oz

Search Part Number : "IPD60R600C6", Match & Start with "IPD60R600C6" - Total : 6

Produttore	Parte #	Descrizione
Infineon Technologies	IPD60R600C6ATMA1	MOSFET N-Ch 600V 20.2A DPAK-2
	IPD60R600C6BTMA1	MOSFET N-CH 600V 7.3A TO252
	IPD60R600C6ATMA1	RF Bipolar Transistors MOSFET N-Ch 600V 20.2A DPAK-2
Infineon Technologies	IPD60R600C6BTMA1	MOSFET N-Ch 600V 7.3A DPAK-2 CoolMOS C6
	IPD60R600C6	Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R (Alt: IPD60R600C6)
	IPD60R600C6 (6R600C6)	Nuovo e originale

IPD60R600C6