 |  |  | |
| PartNumber | IPD60R380E6BTMA1 | IPD60R380E6 | IPD60R380E6ATMA2 |
| Description | MOSFET N-Ch 650V 10.6A DPAK-2 | MOSFET N-Ch 650V 10.6A DPAK-2 | MOSFET NCH 600V 10.6A TO252 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 10.6 A | - | - |
| Rds On Drain Source Resistance | 340 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 32 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | IPD60R380 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 56 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Part # Aliases | IPD60R380E6 SP001105392 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60R380E6BTMA1 | MOSFET N-Ch 650V 10.6A DPAK-2 | |
| IPD60R380E6 | MOSFET N-Ch 650V 10.6A DPAK-2 | ||
Infineon Technologies |
IPD60R380E6ATMA2 | MOSFET NCH 600V 10.6A TO252 | |
| IPD60R380E6BTMA1 | MOSFET N-Ch 650V 10.6A DPAK-2 |