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Parte # | Mfg. | Descrizione | Azione | Prezzo |
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IPD60R380E6BTMA1 DISTI # IPD60R380E6BTMA1-ND | Infineon Technologies AG | MOSFET NCH 600V 10.6A TO252 RoHS: Not compliant Container: Bulk | Limited Supply - Call | |
IPD60R380E6ATMA2 DISTI # IPD60R380E6ATMA2-ND | Infineon Technologies AG | MOSFET NCH 600V 10.6A TO252 RoHS: Not compliant Container: Bulk | Limited Supply - Call | |
IPD60R380E6BTMA1 DISTI # IPD60R380E6BTMA1 | Infineon Technologies AG | Trans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R380E6BTMA1) RoHS: Compliant Min Qty: 285 Container: Bulk | Americas - 0 |
|
IPD60R380E6BTMA1 DISTI # SP001105392 | Infineon Technologies AG | Trans MOSFET N-CH 600V 10.6A 3-Pin TO-252 T/R (Alt: SP001105392) RoHS: Not Compliant Min Qty: 1 Container: Tape and Reel | Europe - 0 |
|
IPD60R380E6 DISTI # 726-IPD60R380E6 | Infineon Technologies AG | MOSFET N-Ch 650V 10.6A DPAK-2 | 0 | |
IPD60R380E6BTMA1 DISTI # 726-IPD60R380E6BTMA1 | Infineon Technologies AG | MOSFET N-Ch 650V 10.6A DPAK-2 | 0 | |
IPD60R380E6BTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant | 160000 |
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Immagine | Parte # | Descrizione |
---|---|---|
Mfr.#: IPD60R180C7ATMA1 OMO.#: OMO-IPD60R180C7ATMA1 |
MOSFET HIGH POWER_NEW | |
Mfr.#: IPD60R360CFD7ATMA1 OMO.#: OMO-IPD60R360CFD7ATMA1 |
MOSFET | |
Mfr.#: IPD60R650CEBTMA1 OMO.#: OMO-IPD60R650CEBTMA1 |
MOSFET CONSUMER | |
Mfr.#: IPD60R2K1CEBTMA1 OMO.#: OMO-IPD60R2K1CEBTMA1 |
MOSFET N-Ch 600V 2.3A DPAK-2 | |
Mfr.#: IPD60R800CEAUMA1 |
Trans MOSFET N-CH 600V 8.4A 3-Pin(2+Tab) DPAK T/R | |
Mfr.#: IPD60R1K5CEATMA1 , 2SD23 |
Nuovo e originale | |
Mfr.#: IPD60R400CEATMA1 |
MOSFET N-CH 600V TO-252-3 | |
Mfr.#: IPD60R600C6 OMO.#: OMO-IPD60R600C6-1190 |
Trans MOSFET N-CH 600V 7.3A 3-Pin TO-252 T/R (Alt: IPD60R600C6) | |
Mfr.#: IPD60R600CPATMA1 |
MOSFET N-CH 600V 6.1A TO-252 | |
Mfr.#: IPD60R750E6ATMA1 |
RF Bipolar Transistors MOSFET N-Ch 650V 5.7A DPAK-2 |