 | | | |
| PartNumber | IPD30N08S222ATMA1 | IPD30N08S2-22 | IPD30N06S4L23ATMA2 |
| Description | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET MOSFET |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 17.4 mOhms | 17.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 57 nC | 57 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 136 W | 136 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 20 ns | 20 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 30 ns | 30 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 33 ns | 33 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | IPD30N08S2-22 IPD3N8S222XT SP000252169 | IPD30N08S222ATMA1 IPD3N8S222XT SP000252169 | IPD30N06S4L-23 IPD3N6S4L23XT SP001028638 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Series | - | - | IPD30N06 |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD30N12S3L31ATMA1 | MOSFET N-CHANNEL 100+ | |
| IPD30N10S3L-34 | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | ||
| IPD30N10S3L34ATMA1 | MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | ||
| IPD30N08S2L21ATMA1 | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | ||
| IPD30N08S2L-21 | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | ||
| IPD30N08S222ATMA1 | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | ||
| IPD30N08S2-22 | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | ||
| IPD30N06S4L23ATMA2 | MOSFET MOSFET | ||
| IPD30N10S3L34ATMA1 | MOSFET N-CH 100V 30A TO252-3 | ||
| IPD30N08S2L-21 | Trans MOSFET N-CH 75V 30A 3-Pin TO-252 T/R (Alt: IPD30N08S2L-21) | ||
| IPD30N06S4L23ATMA2 | MOSFET N-CH 60V 30A TO252-3 | ||
| IPD30N12S3L31ATMA1 | MOSFET N-CHANNEL_100+ | ||
| IPD30N08S2-22 | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | ||
| IPD30N08S222ATMA1 | MOSFET N-CH 75V 30A TO252-3 | ||
| IPD30N08S2L21ATMA1 | MOSFET N-CH 75V 30A TO252-3 | ||
| IPD30N10S3L-34 | IGBT Transistors MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T | ||
| IPD30N08S2L21ATMA1-CUT TAPE | Nuovo e originale | ||
| IPD30N10S3L34ATMA1-CUT TAPE | Nuovo e originale | ||
| IPD30N08S2-22 2N0822 | Nuovo e originale | ||
| IPD30N08S2L21 | MOSFET, N-CH, 75V,30A, TO252-3 | ||
| IPD30N10S3L-34 , 2SD2153 | Nuovo e originale | ||
| IPD30N10S3L-34(3N10L34) | Nuovo e originale |