IPD30N06S4L23ATMA2

Mfr. #:: IPD30N06S4L23ATMA2
Produttore:: Infineon Technologies
Descrizione:: MOSFET MOSFET
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPD30N06S4L23ATMA2 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IPD30N06S4L23ATMA2 Datasheet IPD30N06S4L23ATMA2 Datasheet (P4-P6)IPD30N06S4L23ATMA2 Datasheet (P7-P9)
ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: TO-252-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale N

Configurazione:: Separare

Qualificazione:: AEC-Q101

Confezione:: Bobina

Altezza:: 2.3 mm

Lunghezza:: 6.5 mm

Serie:: IPD30N06

Tipo di transistor:: 1 N-Channel

Larghezza:: 6.22 mm

Marca:: Tecnologie Infineon

Tipologia di prodotto:: MOSFET

Quantità confezione di fabbrica:: 2500

sottocategoria:: MOSFET

Parte # Alias:: IPD30N06S4L-23 IPD3N6S4L23XT SP001028638

Unità di peso:: 0.139332 oz

Tags: IPD30N06S4, IPD30N06S, IPD30N06, IPD30N0, IPD30N, IPD30, IPD3, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD30N06S4L23ATMA2 Descrizione

***p One Stop Global: Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) TO-252 T/R

***ical: Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R

***et: Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) TO-252 T/R

***Components: MOSFET N-Ch 60V 30A OptiMOS-T2 TO-252

***et Europe: MOSFET N-CH 60V 30A TO252-3

***ronik: N-CH 60V 30A 23mOhm TO252

***ark: Mosfet, Aec-Q101, N-Ch, 60V, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:38W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T2 Series; Automotive Qualification Standard:AEC-Q101; MSL:-; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, CA-N, 60V, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.018ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:38W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS T2 Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPD30N06S4L23ATMA2 DISTI # V72:2272_06391013	Infineon Technologies AG	Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R	2400	1000:$0.2891 500:$0.3376 250:$0.3570 100:$0.3730 25:$0.5306 10:$0.6486 1:$0.7719
IPD30N06S4L23ATMA2 DISTI # V36:1790_06391013	Infineon Technologies AG	Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R	0
IPD30N06S4L23ATMA2 DISTI # IPD30N06S4L23ATMA2CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3084In Stock	1000:$0.3321 500:$0.4151 100:$0.5251 10:$0.6850 1:$0.7800
IPD30N06S4L23ATMA2 DISTI # IPD30N06S4L23ATMA2DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3084In Stock	1000:$0.3321 500:$0.4151 100:$0.5251 10:$0.6850 1:$0.7800
IPD30N06S4L23ATMA2 DISTI # IPD30N06S4L23ATMA2TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 30A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.2687 5000:$0.2720 2500:$0.2922
IPD30N06S4L23ATMA2 DISTI # 31675415	Infineon Technologies AG	Trans MOSFET N-CH 60V 30A Automotive 3-Pin(2+Tab) DPAK T/R	2400	1000:$0.2891 500:$0.3376 250:$0.3570 100:$0.3730 25:$0.5306 24:$0.6486
IPD30N06S4L23ATMA2 DISTI # IPD30N06S4L23ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 30A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD30N06S4L23ATMA2) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2429 15000:$0.2479 10000:$0.2559 5000:$0.2659 2500:$0.2759
IPD30N06S4L23ATMA2 DISTI # 49AC0292	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 60V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power RoHS Compliant: Yes	1579	1000:$0.3110 500:$0.3370 250:$0.3620 100:$0.3880 50:$0.4590 25:$0.5300 10:$0.6010 1:$0.7170
IPD30N06S4L23ATMA2 DISTI # 726-IPD30N06S4L23ATM	Infineon Technologies AG	MOSFET MOSFET RoHS: Compliant	4173	1:$0.7100 10:$0.5950 100:$0.3840 1000:$0.3080 2500:$0.2600 10000:$0.2500 25000:$0.2400
IPD30N06S4L-23 DISTI # 726-IPD30N06S4L-23	Infineon Technologies AG	MOSFET N-Ch 60V 30A DPAK-2 OptiMOS-T2 RoHS: Compliant	0
IPD30N06S4L23ATMA2 DISTI # 2839460	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 60V, TO-252	1578	500:£0.2370 250:£0.2690 100:£0.3020 25:£0.4860 5:£0.5270
IPD30N06S4L23ATMA2 DISTI # 2839460	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 60V, TO-252 RoHS: Compliant	1574	5000:$0.4280 1000:$0.4520 500:$0.4770 250:$0.5520 100:$0.6540 25:$0.8010 5:$0.9190

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Disponibilità

Azione:: Available
Su ordine:: 1987
Inserisci la quantità:

Il prezzo attuale di IPD30N06S4L23ATMA2 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,71 USD~~; ~~0,71 USD~~

10: ~~0,60 USD~~; ~~5,95 USD~~

100: ~~0,38 USD~~; ~~38,40 USD~~

1000: ~~0,31 USD~~; ~~308,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

IPD30N06S4 3
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IPD30N06 27
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IPD30N06S4L23ATMA2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes