IPB123N10N

IPB123N10N3 G vs IPB123N10N3GATMA1 vs IPB123N10N3GATMA1-CUT TAPE

 
PartNumberIPB123N10N3 GIPB123N10N3GATMA1IPB123N10N3GATMA1-CUT TAPE
DescriptionMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current58 A58 A-
Rds On Drain Source Resistance10.7 mOhms10.7 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge35 nC35 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation94 W94 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height4.4 mm4.4 mm-
Length10 mm10 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
TypeOptiMOS 3 Power-Transistor--
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min29 S29 S-
Fall Time5 ns5 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns8 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time14 ns14 ns-
Part # AliasesIPB123N10N3GATMA1 IPB123N1N3GXT SP000485968G IPB123N10N3 IPB123N1N3GXT SP000485968-
Unit Weight0.139332 oz0.139332 oz-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
IPB123N10N3 G MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
IPB123N10N3GATMA1 MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
IPB123N10N3GATMA1 MOSFET N-CH 100V 58A TO263-3
IPB123N10N3GATMA1-CUT TAPE Nuovo e originale
IPB123N10N3GS Nuovo e originale
IPB123N10N Nuovo e originale
IPB123N10N3G Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968)
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