IPB123N10N3GATMA1

IPB123N10N3GATMA1
Mfr. #:
IPB123N10N3GATMA1
Produttore:
Infineon Technologies
Descrizione:
MOSFET N-CH 100V 58A TO263-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IPB123N10N3GATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
XPB123N10
Confezione
Bobina
Alias ​​parziali
G IPB123N10N3 IPB123N10N3GXT SP000485968
Stile di montaggio
SMD/SMT
Nome depositato
OptiMOS
Pacchetto-Custodia
TO-263-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
94 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
5 ns
Ora di alzarsi
8 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
58 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.7 V
Rds-On-Drain-Source-Resistenza
10.7 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
24 ns
Tempo di ritardo all'accensione tipico
14 ns
Qg-Gate-Carica
26 nC
Transconduttanza diretta-Min
57 S
Modalità canale
Aumento
Tags
IPB123N10N3, IPB123, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 100V 58A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
IPB123N10N3 Series 100 V 12.3 mOhm 58 A Optimos Power Transistor - TO-263-3
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
Parte # Mfg. Descrizione Azione Prezzo
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1501In Stock
  • 500:$1.1129
  • 100:$1.4309
  • 10:$1.7810
  • 1:$1.9700
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1501In Stock
  • 500:$1.1129
  • 100:$1.4309
  • 10:$1.7810
  • 1:$1.9700
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 100V 58A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 1000:$0.8953
IPB123N10N3GXT
DISTI # IPB123N10N3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 100V 58A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB123N10N3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$0.8079
  • 2000:$0.7789
  • 4000:$0.7509
  • 6000:$0.7259
  • 10000:$0.7129
IPB123N10N3GATMA1
DISTI # 85X6018
Infineon Technologies AGMOSFET Transistor, N Channel, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V RoHS Compliant: Yes430
  • 500:$0.9830
  • 250:$1.0600
  • 100:$1.1300
  • 50:$1.2200
  • 25:$1.3200
  • 10:$1.4100
  • 1:$1.6600
IPB123N10N3 G
DISTI # 726-IPB123N10N3G
Infineon Technologies AGMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
RoHS: Compliant
980
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9830
  • 1000:$0.8140
  • 2000:$0.7580
  • 5000:$0.7300
  • 10000:$0.7020
IPB123N10N3GATMA1
DISTI # 726-IPB123N10N3GATMA
Infineon Technologies AGMOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
RoHS: Compliant
85
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9830
  • 1000:$0.8140
  • 2000:$0.7580
  • 5000:$0.7300
  • 10000:$0.7020
IPB123N10N3GATMA1
DISTI # 8269036P
Infineon Technologies AGMOSFET N-CH 58A 100V OPTIMOS3 TO263, RL360
  • 200:£0.9720
IPB123N10N3GATMA1
DISTI # IPB123N10N3GATMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,58A,94W,PG-TO263-3176
  • 1:$0.5200
  • 3:$0.5133
IPB123N10N3GATMA1
DISTI # 2443384RL
Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant
0
  • 1000:$1.3000
  • 500:$1.5600
  • 100:$1.7900
  • 10:$2.2300
  • 1:$2.6300
IPB123N10N3GATMA1
DISTI # 2443384
Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant
430
  • 1000:$1.3000
  • 500:$1.5600
  • 100:$1.7900
  • 10:$2.2300
  • 1:$2.6300
IPB123N10N3GATMA1
DISTI # 2443384
Infineon Technologies AGMOSFET, N CH, 100V, 58A, TO-263-3
RoHS: Compliant
440
  • 500:£0.7930
  • 250:£0.8520
  • 100:£0.9110
  • 25:£1.1400
  • 5:£1.3100
Immagine Parte # Descrizione
IPB123N10N3 G

Mfr.#: IPB123N10N3 G

OMO.#: OMO-IPB123N10N3-G

MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
IPB123N10N3GATMA1

Mfr.#: IPB123N10N3GATMA1

OMO.#: OMO-IPB123N10N3GATMA1

MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3
IPB123N10N3GATMA1-CUT TAPE

Mfr.#: IPB123N10N3GATMA1-CUT TAPE

OMO.#: OMO-IPB123N10N3GATMA1-CUT-TAPE-1190

Nuovo e originale
IPB123N10N

Mfr.#: IPB123N10N

OMO.#: OMO-IPB123N10N-1190

Nuovo e originale
IPB123N10N3G

Mfr.#: IPB123N10N3G

OMO.#: OMO-IPB123N10N3G-1190

Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968)
IPB123N10N3GATMA1

Mfr.#: IPB123N10N3GATMA1

OMO.#: OMO-IPB123N10N3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 100V 58A TO263-3
IPB123N10N3GS

Mfr.#: IPB123N10N3GS

OMO.#: OMO-IPB123N10N3GS-1190

Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di IPB123N10N3GATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,77 USD
0,77 USD
10
0,73 USD
7,32 USD
100
0,69 USD
69,30 USD
500
0,65 USD
327,25 USD
1000
0,62 USD
616,00 USD
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