 | | | |
| PartNumber | IPB120P04P4-04 | IPB120N10S405ATMA1 | IPB120P04P404ATMA1 |
| Description | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | MOSFET N-CHANNEL 100+ | MOSFET P-CHANNEL |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-263-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 3.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 158 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS-P2 | - | - |
| Transistor Type | 1 P-Channel | 1 N-Channel | 1 P-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 52 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 49 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | IPB120P04P404ATMA1 IPB12P4P44XT SP000842270 | IPB120N10S4-05 SP001102592 | IPB120P04P4-04 IPB12P4P44XT SP000842270 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB120P04P4L-03 | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | |
| IPB123N10N3 G | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | ||
| IPB120P04P4L03ATMA1 | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | ||
| IPB120P04P4-04 | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | ||
| IPB123N10N3GATMA1 | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | ||
| IPB120P04P404ATMA1 | MOSFET P-CH TO263-3 | ||
| IPB120P04P4L03ATMA1 | MOSFET P-CH 40V 120A TO263-3 | ||
| IPB12CN10N G | MOSFET N-CH 100V 67A TO263-3 | ||
| IPB123N10N3GATMA1 | MOSFET N-CH 100V 58A TO263-3 | ||
| IPB12CNE8N G | MOSFET N-CH 85V 67A TO263-3 | ||
| IPB120N10S405ATMA1 | MOSFET N-CHANNEL 100+ | ||
Infineon Technologies |
IPB12CN10N G | MOSFET N-Ch 85V 67A D2PAK-2 | |
| IPB120P04P404ATMA1 | MOSFET P-CHANNEL | ||
| IPB123N10N3GATMA1-CUT TAPE | Nuovo e originale | ||
| IPB120P04P4L-03 | Trans MOSFET P-CH 40V 120A 3-Pin TO-263 T/R (Alt: IPB120P04P4L-03) | ||
| IPB1214221K-10 | Nuovo e originale | ||
| IPB123N10N | Nuovo e originale | ||
| IPB123N10N3G | Trans MOSFET N-CH 100V 58A 3-Pin TO-263 T/R (Alt: SP000485968) | ||
| IPB123N10N3GS | Nuovo e originale | ||
| IPB12CN10LG | Nuovo e originale | ||
| IPB12CN10N | Nuovo e originale | ||
| IPB12CN10NG | Nuovo e originale | ||
| IPB12CNE8NG | Nuovo e originale | ||
| IPB120P04P4-04 | Darlington Transistors MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 |