PartNumber | IPB080N03L G | IPB080N06N G | IPB080N03LGATMA1 |
Description | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | MOSFET N-Ch 60V 80A D2PAK-2 | MOSFET N-CH 30V 50A TO263-3 |
Manufacturer | Infineon | Infineon | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-263-3 | TO-263-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 60 V | - |
Id Continuous Drain Current | 50 A | 80 A | - |
Rds On Drain Source Resistance | 8 mOhms | 8 mOhms | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 47 W | 214 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | - | - |
Packaging | Reel | Reel | - |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Series | OptiMOS 3 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Fall Time | 2.8 ns | 14 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.6 ns | 15 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 18 ns | 32 ns | - |
Typical Turn On Delay Time | 4.6 ns | 14 ns | - |
Part # Aliases | IPB080N03LGATMA1 IPB8N3LGXT SP000304104 | IPB080N06NGXT SP000204174 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Produttore | Parte # | Descrizione | RFQ |
---|---|---|---|
Infineon Technologies |
IPB083N10N3 G | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | |
IPB081N06L3 G | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | ||
IPB083N10N3GATMA1 | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | ||
IPB081N06L3GATMA1 | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | ||
IPB090N06N3 G | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | ||
IPB080N03L G | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | ||
IPB083N15N5LFATMA1 | MOSFET N-CH 150V 105A TO263-3 | ||
IPB080N06N G | MOSFET N-CH 60V 80A TO-263 | ||
IPB085N06L G | MOSFET N-CH 60V 80A TO-263 | ||
IPB08CN10N G | MOSFET N-CH 100V 95A TO263-3 | ||
IPB08CNE8N G | MOSFET N-CH 85V 95A TO263-3 | ||
IPB080N03L G | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | ||
IPB080N03LGATMA1 | MOSFET N-CH 30V 50A TO263-3 | ||
IPB081N06L3 G | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | ||
IPB081N06L3GATMA1 | MOSFET N-CH 60V 50A TO263-3 | ||
IPB083N10N3 G | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | ||
IPB083N10N3GATMA1 | MOSFET N-CH 100V 80A TO263-3 | ||
IPB090N06N3 G | IPB090N06N3 G | ||
IPB090N06N3GATMA1 | MOSFET N-CH 60V 50A TO263-3 | ||
IPB093N04LGATMA1 | MOSFET N-CH 40V 50A TO263-3 | ||
IPB096N03LGATMA1 | MOSFET N-CH 30V 35A TO-263-3 | ||
IPB097N08N3 G | IGBT Transistors MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 | ||
Infineon Technologies |
IPB085N06L G | MOSFET N-Ch 60V 80A D2PAK-2 | |
IPB08CNE8N G | MOSFET N-Ch 85V 95A D2PAK-2 | ||
IPB083N15N5LFATMA1 | MOSFET | ||
IPB08CN10N G | MOSFET N-Ch 100V 95A D2PAK-2 | ||
IPB097N08N3 G | MOSFET N-Ch 80V 70A D2PAK-2 OptiMOS 3 | ||
IPB090N06N3GATMA1 | MOSFET MV POWER MOS | ||
IPB080N06N G | MOSFET N-Ch 60V 80A D2PAK-2 | ||
IPB083N10N3G | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) TO-263 | ||
IPB081N06L3G | Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398076) | ||
IPB083N10N3 | Nuovo e originale | ||
IPB096N03L G | IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 | ||
IPB083N10N3G. | Nuovo e originale | ||
IPB080N06NG | Nuovo e originale | ||
IPB081N06L3 | Nuovo e originale | ||
IPB083N10N3G , 2SD1936T | Nuovo e originale | ||
IPB083N10N3GATMA1 , 2SD1 | Nuovo e originale | ||
IPB08CN10NG | Nuovo e originale | ||
IPB08NE8NEG | Nuovo e originale | ||
IPB090N06N3G | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB090N06N3GATMA1 , 2SD1 | Nuovo e originale | ||
IPB090N06N3GS | Nuovo e originale | ||
IPB091N06NG | MOSFET N-Ch 60V 80A D2PAK-2 | ||
IPB093N04L G | Nuovo e originale | ||
IPB096N03L | Nuovo e originale | ||
IPB097N08N3 | Nuovo e originale | ||
IPB080N03LG | Trans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB080N03L G) | ||
IPB093N04LG | Power Field-Effect Transistor, 46A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
IPB096N03LG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |