We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 35A TO-263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB096N03LGATMA1 DISTI # IPB096N03LGATMA1 | Infineon Technologies AG | N-KANAL POWER MOS - Bulk (Alt: IPB096N03LGATMA1) Min Qty: 893 Container: Bulk | Americas - 0 |
|
| IPB096N03L G DISTI # 726-IPB096N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 RoHS: Compliant | 0 | |
| IPB096N03LGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 5000 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPB096N03L OMO.#: OMO-IPB096N03L-1190 |
Nuovo e originale |
|
|
Mfr.#: IPB096N03LG OMO.#: OMO-IPB096N03LG-1190 |
Power Field-Effect Transistor, 35A I(D), 30V, 0.0141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
Mfr.#: IPB096N03LGATMA1 |
MOSFET N-CH 30V 35A TO-263-3 |
|
|
Mfr.#: IPB096N03L G OMO.#: OMO-IPB096N03L-G-126 |
IGBT Transistors MOSFET N-Ch 30V 35A D2PAK-2 OptiMOS 3 |
