IHW

IHW30N110R3FKSA1 vs IHW30N110R3 vs IHW30N120R2

 
PartNumberIHW30N110R3FKSA1IHW30N110R3IHW30N120R2
DescriptionIGBT Transistors IGBT PRODUCTSIGBT Transistors IGBT PRODUCTSIGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT TransistorsIGBT TransistorsIGBTs - Single
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough HoleThrough Hole
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1100 V1100 V-
Collector Emitter Saturation Voltage1.55 V1.55 V2 V
Maximum Gate Emitter Voltage20 V20 V+/- 20 V
Continuous Collector Current at 25 C60 A60 A30 A
Pd Power Dissipation333 W333 W-
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 175 C+ 175 C+ 150 C
SeriesRCRCTrenchStopR
PackagingTubeTubeTube
BrandInfineon TechnologiesInfineon Technologies-
Gate Emitter Leakage Current100 nA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity240240-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesIHW30N110R3 IHW3N11R3XK SP000702510IHW30N110R3FKSA1 IHW3N11R3XK SP000702510-
Unit Weight0.190479 oz0.229281 oz1.340411 oz
Part Aliases--IHW30N120R2FKSA1 SP000212017
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--PG-TO247-3
Power Max--390W
Reverse Recovery Time trr---
Current Collector Ic Max--60A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type--NPT, Trench Field Stop
Current Collector Pulsed Icm--90A
Vce on Max Vge Ic--1.8V @ 15V, 30A
Switching Energy--3.1mJ
Gate Charge--198nC
Td on off 25°C---/792ns
Test Condition--600V, 30A, 28 Ohm, 15V
Pd Power Dissipation--390 W
Collector Emitter Voltage VCEO Max--1.2 kV
Continuous Collector Current Ic Max--30 A
  • Iniziare con
  • IHW 174
Produttore Parte # Descrizione RFQ
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