IHW30N65R5XKSA1

Mfr. #:: IHW30N65R5XKSA1
Produttore:: Infineon Technologies
Descrizione:: IGBT TRENCH 650V 60A TO247-3
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IHW30N65R5XKSA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Tags: IHW30N6, IHW30N, IHW3, IHW

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IHW30N65R5XKSA1 Descrizione

***ical: Trans IGBT Chip N-CH 650V 60A 176000mW 3-Pin(3+Tab) TO-247 Tube

***et: Transistor IGBT Chip N-Channel 650V 60A 3-Pin TO-247 Tube

***et Europe: Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube

***an P&S: 650V,60A,Reverse Conducting IGBT

***i-Key: IGBT TRENCH 650V 60A TO247-3

***ronik: IGBT 650V 30A 1,35V TO247-3

***ark: Igbt, Single, 650V, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:176W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, SINGLE, 650V, 60A, TO-247; DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.35V; Power Dissipation Pd:176W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, SINGOLO, 650V, 60A, TO-247; Corrente di Collettore CC:60A; Tensione Saturaz Collettore-Emettitore Vce(on):1.35V; Dissipazione di Potenza Pd:176W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IHW30N65R5XKSA1 DISTI # 33959970	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 60A 176000mW 3-Pin(3+Tab) TO-247 Tube	238	7:$1.5876
IHW30N65R5XKSA1 DISTI # IHW30N65R5XKSA1-ND	Infineon Technologies AG	IGBT TRENCH 650V 60A TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube	267In Stock	2640:$1.8831 720:$2.3445 240:$2.7541 25:$3.1776 10:$3.3610 1:$3.7400
IHW30N65R5XKSA1 DISTI # V36:1790_06377019	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 60A 176000mW 3-Pin(3+Tab) TO-247 Tube	0	240000:$1.5670 120000:$1.5690 24000:$1.7510 2400:$2.0590 240:$2.1100
IHW30N65R5XKSA1 DISTI # SP001273470	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube (Alt: SP001273470) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 200	1000:€1.3900 50:€1.4900 100:€1.4900 500:€1.4900 10:€1.5900 25:€1.5900 1:€1.6900
IHW30N65R5XKSA1 DISTI # IHW30N65R5	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube (Alt: IHW30N65R5) RoHS: Compliant Min Qty: 240 Container: Tube	Asia - 1200	480:$0.6540 240:$0.6546
IHW30N65R5XKSA1 DISTI # IHW30N65R5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Bulk (Alt: IHW30N65R5XKSA1) Min Qty: 216 Container: Bulk	Americas - 0	2160:$1.3900 648:$1.4900 1080:$1.4900 216:$1.5900 432:$1.5900
IHW30N65R5XKSA1 DISTI # IHW30N65R5XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube - Rail/Tube (Alt: IHW30N65R5XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	1440:$1.6900 2400:$1.6900 480:$1.7900 960:$1.7900 240:$1.8900
IHW30N65R5XKSA1 DISTI # 726-IHW30N65R5XKSA1	Infineon Technologies AG	IGBT Transistors Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC	466	1:$3.5600 10:$3.0200 100:$2.6200 250:$2.4800 500:$2.2300
IHW30N65R5XKSA1	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	60	1000:$1.5300 500:$1.6100 100:$1.6700 25:$1.7400 1:$1.8800
IHW30N65R5XKSA1 DISTI # IHW30N65R5	Infineon Technologies AG	Transistor: IGBT,650V,30A,88W,TO247-3	47	30:$2.1200 10:$2.3500 3:$2.6600 1:$2.9600
IHW30N65R5XKSA1 DISTI # 2781026	Infineon Technologies AG	IGBT, SINGLE, 650V, 60A, TO-247	0	500:£1.7000 250:£1.9000 100:£2.0000 10:£2.3100 1:£3.0500
IHW30N65R5XKSA1 DISTI # 2781026	Infineon Technologies AG	IGBT, SINGLE, 650V, 60A, TO-247 RoHS: Compliant	0	1000:$2.8400 500:$2.9900 250:$3.1500 100:$3.3300 10:$3.7600 1:$4.0300

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IHW30N65R5XKSA1 OMO.#: OMO-IHW30N65R5XKSA1	IGBT Transistors Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in
	Mfr.#: IHW30N60TFKSA1 OMO.#: OMO-IHW30N60TFKSA1	IGBT Transistors IGBT 600V in TRENCHSTOP and Fieldstop technology with optimised diode.
	Mfr.#: IHW30N60 OMO.#: OMO-IHW30N60-1190	Nuovo e originale
	Mfr.#: IHW30N60H3 OMO.#: OMO-IHW30N60H3-1190	Nuovo e originale
	Mfr.#: IHW30N60T,H30T60 OMO.#: OMO-IHW30N60T-H30T60-1190	Nuovo e originale
	Mfr.#: IHW30N60TFKSA1 OMO.#: OMO-IHW30N60TFKSA1-INFINEON-TECHNOLOGIES	IGBT 600V 60A 187W TO247-3
	Mfr.#: IHW30N65R5 OMO.#: OMO-IHW30N65R5-1190	650V,60A,Reverse Conducting IGBT
	Mfr.#: IHW30N65R5XKSA1 OMO.#: OMO-IHW30N65R5XKSA1-INFINEON-TECHNOLOGIES	IGBT TRENCH 650V 60A TO247-3
	Mfr.#: IHW30N60T OMO.#: OMO-IHW30N60T-126	IGBT Transistors LOW LOSS DuoPack 600V 30A

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IHW30N65R5XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes