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| PartNumber | IGB20N65S5ATMA1 | IGB20N60H3 | IGB20N60H3ATMA1 |
| Description | IGBT Transistors IGBT PRODUCTS | IGBT Transistors 600v Hi-Speed SW IGBT | IGBT Transistors IGBT PRODUCTS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 650 V | 600 V | - |
| Collector Emitter Saturation Voltage | 1.35 V | 1.95 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Continuous Collector Current at 25 C | 40 A | 40 A | - |
| Pd Power Dissipation | 125 W | 170 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Packaging | Reel | Reel | Reel |
| Continuous Collector Current Ic Max | 40 A | - | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Part # Aliases | IGB20N65S5 SP001502564 | IGB20N60H3ATMA1 IGB2N6H3XT SP000852232 | IGB20N60H3 IGB2N6H3XT SP000852232 |
| Series | - | HighSpeed 3 | HighSpeed 3 |
| Tradename | - | TRENCHSTOP | TRENCHSTOP |
| Unit Weight | - | 0.077603 oz | - |