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IGB20N65S5ATMA1

IGB20N65S5ATMA1
Mfr. #:
IGB20N65S5ATMA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors IGBT PRODUCTS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IGB20N65S5ATMA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IGB20N65S5ATMA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-263-3
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.35 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
40 A
Pd - Dissipazione di potenza:
125 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Bobina
Corrente continua del collettore Ic Max:
40 A
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
1000
sottocategoria:
IGBT
Parte # Alias:
IGB20N65S5 SP001502564
Tags
IGB2, IGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
Prices include import duty and tax. IGBT, 650V, 40A, 175DEG C, 125W;
***ark
IGBT, 650V, 40A, 175DEG C, 125W
***nell
IGBT, 650V, 40A, 175°C, 125W;
***ronik
IGBT 650V 20A 1.35V TO263-3
***et Europe
IGBT PRODUCTS
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Parte # Mfg. Descrizione Azione Prezzo
IGB20N65S5ATMA1
DISTI # IGB20N65S5ATMA1-ND		Infineon Technologies AGIGBT PRODUCTS
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.1027
IGB20N65S5ATMA1
DISTI # IGB20N65S5ATMA1		Infineon Technologies AGIGBT PRODUCTS - Tape and Reel (Alt: IGB20N65S5ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.9199
  • 6000:$0.9369
  • 4000:$0.9689
  • 2000:$1.0049
  • 1000:$1.0429
IGB20N65S5ATMA1
DISTI # 726-IGB20N65S5ATMA1		Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant		1000
  • 1:$2.1400
  • 10:$1.8200
  • 100:$1.4500
  • 500:$1.2700
  • 1000:$1.0600
  • 2000:$0.9780
  • 5000:$0.9420
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STTH30RQ06G2Y-TR

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L78L08ABD13TR

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OMO.#: OMO-L78L08ABD13TR

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L78L08ABD13TR

Mfr.#: L78L08ABD13TR

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 IC REG LINEAR 8V 100MA 8SO
Disponibilità
Azione:
900
Su ordine:
2883
Inserisci la quantità:
Il prezzo attuale di IGB20N65S5ATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
2,14 USD
2,14 USD
10
1,82 USD
18,20 USD
100
1,45 USD
145,00 USD
500
1,27 USD
635,00 USD
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