 |  | | |
| PartNumber | HN2C01FU-GR(T5L,F) | HN2C01FU-GR(T5LF)CT-ND | HN2C01FU-GR(T5LF) |
| Description | Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6 | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | US-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.1 V | - | - |
| Maximum DC Collector Current | 150 mA | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Series | HN2C01 | - | - |
| DC Current Gain hFE Max | 400 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Toshiba |
HN2C01FU-GR(T5L,F) | Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6 | |
| HN2C01FU-GR(T5L,F) | Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6 | ||
| HN2C01FU-GR(T5LF)CT-ND | Nuovo e originale | ||
| HN2C01FU-GR(T5LF)DKR-ND | Nuovo e originale | ||
| HN2C01FU-GR(T5LF)TR-ND | Nuovo e originale | ||
| HN2C01FU-GR(T5LF) | Nuovo e originale |