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HN2C01FU-GR(T5L,F)

HN2C01FU-GR(T5L,F)
Mfr. #:
HN2C01FU-GR(T5L,F)
Produttore:
Toshiba
Descrizione:
Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HN2C01FU-GR(T5L,F) Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HN2C01FU-GR(T5L,F) Datasheet
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Toshiba
Categoria di prodotto:
Transistor bipolari - BJT
RoHS:
Y
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
US-6
Polarità del transistor:
NPN
Configurazione:
Dual
Tensione collettore-emettitore VCEO Max:
50 V
Collettore-tensione di base VCBO:
60 V
Emettitore-tensione di base VEBO:
5 V
Tensione di saturazione collettore-emettitore:
0.1 V
Corrente massima del collettore CC:
150 mA
Guadagno larghezza di banda prodotto fT:
80 MHz
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 125 C
Serie:
HN2C01
Guadagno di corrente CC hFE Max:
400
Confezione:
Bobina
Marca:
Toshiba
Guadagno base/collettore DC hfe min:
120
Pd - Dissipazione di potenza:
200 mW
Tipologia di prodotto:
BJT - Transistor bipolari
Quantità confezione di fabbrica:
3000
sottocategoria:
transistor
Tags
HN2C01FU-GR(T, HN2C01FU-G, HN2C01FU, HN2C01, HN2C0, HN2C, HN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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TRANSISTOR DUAL UM6 PNP/NPN; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 150mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz
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***nell
TRANSISTOR DUAL UM6 NPN/NPN; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Power Dissipation Pd: 150mW; DC Collector Current: 150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Current Ic Continuous a Max: 50mA; Gain Bandwidth ft Typ: 180MHz; Hfe Min: 120; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: General Purpose; Transition Frequency ft: 180MHz
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Trans GP BJT NPN 50V 0.15A 6-Pin UMT T/R
***ark
Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:150Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:120Hfe; No. Of Pins:6Pins; Transistor Mounting:surface Mount; Product Range:- Rohs Compliant: Yes
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TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-363; No. of Pins:6; SVHC:No SVHC (18-Jun-2012); Collector Emitter Voltage Vces:400mV; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Package / Case:SOT-363; Power Dissipation Pd:200mW; Termination Type:SMD; Transistor Type:Small Signal
Parte # Mfg. Descrizione Azione Prezzo
HN2C01FU-GR(T5L,F)
DISTI # C1S751200945236		Toshiba America Electronic ComponentsTrans GP BJT NPN 50V 0.15A 6-Pin US T/R
RoHS: Compliant		2900
  • 1000:$0.3280
  • 100:$0.3450
HN2C01FU-GR(T5L,F)
DISTI # HN2C01FU-GR(T5LF)CT-ND		Toshiba America Electronic ComponentsTRANS 2NPN 50V 0.15A US6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8735In Stock
  • 1000:$0.0784
  • 500:$0.1022
  • 250:$0.1278
  • 100:$0.1806
  • 25:$0.2384
  • 10:$0.3070
  • 1:$0.4300
HN2C01FU-GR(T5L,F)
DISTI # HN2C01FU-GR(T5LF)DKR-ND		Toshiba America Electronic ComponentsTRANS 2NPN 50V 0.15A US6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8735In Stock
  • 1000:$0.1045
  • 500:$0.1363
  • 250:$0.1703
  • 100:$0.2407
  • 25:$0.3180
  • 10:$0.4090
  • 1:$0.5700
HN2C01FU-GR(T5L,F)
DISTI # HN2C01FU-GR(T5LF)TR-ND		Toshiba America Electronic ComponentsTRANS 2NPN 50V 0.15A US6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 150000:$0.0294
  • 75000:$0.0331
  • 30000:$0.0353
  • 15000:$0.0375
  • 6000:$0.0441
  • 3000:$0.0507
HN2C01FU-GR(T5L,F)
DISTI # 757-HN2C01FU-GRT5LF		Toshiba America Electronic ComponentsBipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
RoHS: Compliant		5450
  • 1:$0.5500
  • 10:$0.3030
  • 100:$0.1300
  • 1000:$0.1000
  • 3000:$0.0760
  • 9000:$0.0680
  • 24000:$0.0630
  • 45000:$0.0560
  • 99000:$0.0540
Immagine Parte # Descrizione
HN2C01FU-GR(T5L,F)

Mfr.#: HN2C01FU-GR(T5L,F)

OMO.#: OMO-HN2C01FU-GR-T5L-F-

 Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
HN2C01FU-GR(T5L,F)

Mfr.#: HN2C01FU-GR(T5L,F)

OMO.#: OMO-HN2C01FU-GR-T5L-F--TOSHIBA-SEMICONDUCTOR-AND-STOR

 Bipolar Transistors - BJT Dual Trans NPN x 2 50V, 0.15A US6
HN2C01FU-GR(T5LF)DKR-ND

Mfr.#: HN2C01FU-GR(T5LF)DKR-ND

OMO.#: OMO-HN2C01FU-GR-T5LF-DKR-ND-1190

 Nuovo e originale
HN2C01FU-Y(TE85LFCT-ND

Mfr.#: HN2C01FU-Y(TE85LFCT-ND

OMO.#: OMO-HN2C01FU-Y-TE85LFCT-ND-1190

 Nuovo e originale
HN2C01FU-Y(TE85LFTR-ND

Mfr.#: HN2C01FU-Y(TE85LFTR-ND

OMO.#: OMO-HN2C01FU-Y-TE85LFTR-ND-1190

 Nuovo e originale
HN2C01FU-GR

Mfr.#: HN2C01FU-GR

OMO.#: OMO-HN2C01FU-GR-1190

 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
HN2C01FU-GR(L1G)

Mfr.#: HN2C01FU-GR(L1G)

OMO.#: OMO-HN2C01FU-GR-L1G--1190

 Nuovo e originale
HN2C01FU-Y

Mfr.#: HN2C01FU-Y

OMO.#: OMO-HN2C01FU-Y-1190

 Nuovo e originale
HN2C01FU-Y(TE85L,F

Mfr.#: HN2C01FU-Y(TE85L,F

OMO.#: OMO-HN2C01FU-Y-TE85L-F-TOSHIBA-SEMICONDUCTOR-AND-STOR

 Nuovo e originale
HN2C01FU-Y(TE85L,F)

Mfr.#: HN2C01FU-Y(TE85L,F)

OMO.#: OMO-HN2C01FU-Y-TE85L-F--1190

 Nuovo e originale
Disponibilità
Azione:
Available
Su ordine:
1988
Inserisci la quantità:
Il prezzo attuale di HN2C01FU-GR(T5L,F) è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,55 USD
0,55 USD
10
0,30 USD
3,03 USD
100
0,13 USD
13,00 USD
1000
0,10 USD
100,00 USD
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