GA10S

GA10SLT12-220 vs GA10SICP12-263 vs GA10SICP12-247

 
PartNumberGA10SLT12-220GA10SICP12-263GA10SICP12-247
DescriptionSchottky Diodes & Rectifiers 1200V 10A Schottky RectifierMOSFET 1200V 25A Std SIC CoPakMOSFET 1200V 25A SIC CoPak
ManufacturerGeneSiC SemiconductorGeneSiC SemiconductorGeneSiC Semiconductor
Product CategorySchottky Diodes & RectifiersMOSFETMOSFET
RoHSYYY
ProductSchottky Diodes--
Mounting StyleThrough HoleSMD/SMTThrough Hole
Package / CaseTO-220TO-263-7TO-247-3
If Forward Current10 A--
Vrrm Repetitive Reverse Voltage1200 V--
Vf Forward Voltage2.3 V--
TechnologySiSiCSiC
Ir Reverse Current0.5 uA--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
SeriesGA10SLT12-GA10SICP12
PackagingBulkReelTube
Operating Temperature Range- 55 C to + 175 C--
BrandGeneSiC SemiconductorGeneSiC SemiconductorGeneSiC Semiconductor
Pd Power Dissipation128 W170 W170 W
Product TypeSchottky Diodes & RectifiersMOSFETMOSFET
Factory Pack Quantity305030
SubcategoryDiodes & RectifiersMOSFETsMOSFETs
Unit Weight0.081130 oz0.056438 oz1.340411 oz
Number of Channels-1 Channel1 Channel
Transistor Polarity-N-ChannelN-Channel
Vds Drain Source Breakdown Voltage-1.2 kV1.2 kV
Id Continuous Drain Current-25 A25 A
Rds On Drain Source Resistance-100 mOhms100 mOhms
Vgs Gate Source Voltage-30 V30 V
Qg Gate Charge-55 nC55 nC
Configuration-SingleSingle
Channel Mode-EnhancementEnhancement
Height-4.597 mm-
Length-10.668 mm-
Type-Transistor/Schottky Diode Co-Pack-
Width-9.169 mm-
Produttore Parte # Descrizione RFQ
GeneSiC Semiconductor
GeneSiC Semiconductor
GA10SLT12-220 Schottky Diodes & Rectifiers 1200V 10A Schottky Rectifier
GA10SICP12-263 MOSFET 1200V 25A Std SIC CoPak
GeneSiC Semiconductor
GeneSiC Semiconductor
GA10SICP12-247 MOSFET 1200V 25A SIC CoPak
GA10SICP12-263 TRANS SJT 1200V 25A TO263-7
GA10SLT12-220 Schottky Diodes & Rectifiers 1200V 10A Schottky Rectifie
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