| PartNumber | FGA50N100BNTDTU | FGA50N100BNTD2 | FGA50N100BNTTU |
| Description | IGBT Transistors 600V 4 0A UFD | IGBT Transistors N-ch / 50A 1000V | IGBT 1000V 50A 156W TO3P |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | IGBT Transistors | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Package / Case | TO-3P-3 | TO-3PN | - |
| Mounting Style | Through Hole | Through Hole | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 1000 V | 1000 V | - |
| Collector Emitter Saturation Voltage | 2.5 V | 1.5 V | - |
| Maximum Gate Emitter Voltage | 25 V | 25 V | - |
| Pd Power Dissipation | 156 W | 156 W | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | FGA50N100BNTD | FGA50N100BNTD2 | - |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 50 A | - | - |
| Height | 18.9 mm | - | - |
| Length | 15.8 mm | - | - |
| Width | 5 mm | - | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Continuous Collector Current | 50 A | - | - |
| Gate Emitter Leakage Current | +/- 500 nA | 500 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | - |
| Factory Pack Quantity | 450 | 450 | - |
| Subcategory | IGBTs | IGBTs | - |
| Unit Weight | 0.225789 oz | 0.225789 oz | - |
| Continuous Collector Current at 25 C | - | 50 A | - |