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FGA50N100BNTDTU

FGA50N100BNTDTU
Mfr. #:
FGA50N100BNTDTU
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 600V 4 0A UFD
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FGA50N100BNTDTU Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
FGA50N100BNTDTU maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3P-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1000 V
Tensione di saturazione collettore-emettitore:
2.5 V
Tensione massima dell'emettitore di gate:
25 V
Pd - Dissipazione di potenza:
156 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
FGA50N100BNTD
Confezione:
Tubo
Corrente continua del collettore Ic Max:
50 A
Altezza:
18.9 mm
Lunghezza:
15.8 mm
Larghezza:
5 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
50 A
Corrente di dispersione gate-emettitore:
+/- 500 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Unità di peso:
0.225789 oz
Tags
FGA50N100BNTD, FGA50N100B, FGA50N10, FGA50N1, FGA50N, FGA5, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
IGBT 1000V 50A 156W TO3P / Trans IGBT Chip N-CH 1000V 50A 156000mW 3-Pin(3+Tab) TO-3P Tube
***ark
Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,50A I(C),to-247Var
***th Star Micro
Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder , induction heating and microwave oven applications.
***ark
Transistor,igbt,n-Chan+Diode,1Kv V(Br)Ces,42A I(C),to-264 Rohs Compliant: Yes
***ure Electronics
FGL60N100BNTD Series 1000 V 60 A Through Hole NPT Trench IGBT - TO-264
***rchild Semiconductor
Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder applications.
***ernational Rectifier
1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode
***ical
Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-
***p One Stop Global
Trans IGBT Chip N-CH 1200V 41A 160000mW 3-Pin(3+Tab) TO-247AC Tube
***(Formerly Allied Electronics)
1200V ULTRAFAST 5-40 KHZ DISCRETE IGBT IN A TO-247AC PACKAGE | Infineon IRG4PH40UPBF
***ure Electronics
IRG4PH40U Series 1200 V 21 A N-Channel UltraFast Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.43 V Current release time: 180 ns Power dissipation: 160 W
***ment14 APAC
IGBT, 1200V, 30A, TO-247AC; Transistor Type:IGBT; DC Collector Current:41A; Collector Emitter Voltage Vces:3.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AC; No. of Pins:3; Current Ic Continuous a Max:30A; Current Temperature:25°C; Device Marking:IRG4PH40U; Fall Time Max:190ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:120A; Rise Time:18ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ical
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-220AB
***ure Electronics
IXGP Series 1200 V 40 A Flange Mount GEN X3 IGBT - TO-220AB
***nell
IGBT,1200V,20A,TO-220AB; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 180W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins
***p One Stop Global
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
900V Warp 20-100 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 900 V Collector-emitter saturation voltage: 2.25 V Current release time: 150 ns Power dissipation: 200 W
***nell
IGBT, TO-247; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 900V; Transistor Case Style: TO-247; No. of Pins: 3Pins; MSL: -; SVHC: No SVHC (27-Jun-2018); Cur
***ark
MOSFET; Transistor Type:MOSFET; Package/Case:TO-247AC; Power Dissipation, Pd:200W; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Current Rating:51A; Mounting Type:Through Hole; Voltage Rating:900V ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 900V, 51A, TO-247AC; Transistor Type:IGBT; DC Collector Current:51A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:900V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:51A; Current Temperature:25°C; Device Marking:IRG4PF50WPbF; Fall Time Max:220ns; Fall Time tf:220ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:204A; Rise Time:26ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:900V
***ure Electronics
IXA20I1200PB Series 1200 V 38 A Through Hole Silicon IGBT - TO-220-3
***el Electronic
IXYS SEMICONDUCTOR IXA20I1200PB IGBT Single Transistor, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 Pins
***nell
IGBT,1200V,33A,TO-220; DC Collector Current: 33A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-220AB; No. of Pins: 3Pins;
***ark
Igbt, 1200V, 33A, To-220; Continuous Collector Current:33A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:130W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Product Range:- Rohs Compliant: Yes
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descrizione Azione Prezzo
FGA50N100BNTDTU
DISTI # 31320094		ON Semiconductor1000V, 50A NPT-TRENCH IGBT CO-2250
  • 500:$2.8710
  • 450:$3.1977
FGA50N100BNTDTU
DISTI # 11744703		ON Semiconductor1000V, 50A NPT-TRENCH IGBT CO-270
  • 500:$2.8710
  • 270:$3.1977
FGA50N100BNTDTU
DISTI # FGA50N100BNTDTU-ND		ON SemiconductorIGBT 1000V 50A 156W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube		448In Stock
  • 2700:$2.4461
  • 900:$2.9004
  • 450:$3.2323
  • 25:$3.9312
  • 10:$4.1580
  • 1:$4.6300
FGA50N100BNTDTU
DISTI # FGA50N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA50N100BNTDTU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.9900
  • 500:€2.0900
  • 100:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.6900
FGA50N100BNTDTU
DISTI # FGA50N100BNTDTU		ON SemiconductorTrans IGBT Chip N-CH 1KV 50A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA50N100BNTDTU)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$2.0900
  • 450:$2.1900
  • 900:$2.1900
  • 1800:$2.1900
  • 2700:$2.1900
FGA50N100BNTDTU
DISTI # 86K1436		ON SemiconductorTRANSISTOR,IGBT,N-CHAN+DIODE,1kV V(BR)CES,50A I(C),TO-247var0
  • 10000:$2.3700
  • 2500:$2.5100
  • 1000:$2.6300
  • 500:$3.0800
  • 100:$3.4200
  • 10:$4.1200
  • 1:$5.0800
FGA50N100BNTDTU
DISTI # 512-FGA50N100BNTDTU		ON SemiconductorIGBT Transistors 600V 4 0A UFD
RoHS: Compliant		427
  • 1:$4.6200
  • 10:$3.9300
  • 100:$3.4000
  • 250:$3.2300
  • 500:$2.9000
FGA50N100BNTDTU
DISTI # 8070751P		ON SemiconductorIGBTFAIRCHILDFGA50N100BNTDTU, TU432
  • 200:£2.1050
  • 100:£2.2000
  • 40:£2.3550
  • 10:£2.6900
FGA50N100BNTDTU
DISTI # FGA50N100BNTDTU		ON SemiconductorTransistor: IGBT,1kV,35A,63W,TO3P416
  • 1:$4.5700
  • 3:$4.2400
  • 10:$3.4700
  • 30:$3.0200
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Disponibilità
Azione:
427
Su ordine:
2410
Inserisci la quantità:
Il prezzo attuale di FGA50N100BNTDTU è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,62 USD
4,62 USD
10
3,93 USD
39,30 USD
100
3,40 USD
340,00 USD
250
3,23 USD
807,50 USD
500
2,90 USD
1 450,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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