FDB8636

FDB86360-F085 vs FDB86363-F085 vs FDB86360

 
PartNumberFDB86360-F085FDB86363-F085FDB86360
DescriptionMOSFET N-Channel Power Trench MOSFETMOSFET N-Channel Power Trench MOSFET
ManufacturerON SemiconductorON SemiconductorFAIRCHILD
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current110 A110 A-
Rds On Drain Source Resistance1.5 mOhms2 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge207 nC131 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation333 W300 W-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
TradenamePowerTrenchPowerTrench-
PackagingReelReel-
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
SeriesFDB86360_F085FDB86363_F085-
Transistor Type1 N-Channel1 N-Channel-
Width9.65 mm9.65 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time70 ns40 ns-
Product TypeMOSFETMOSFET-
Rise Time197 ns129 ns-
Factory Pack Quantity800800-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time86 ns64 ns-
Typical Turn On Delay Time75 ns38 ns-
Part # AliasesFDB86360_F085FDB86363_F085-
Unit Weight0.046296 oz0.046296 oz-
Produttore Parte # Descrizione RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FDB86360-F085 MOSFET N-Channel Power Trench MOSFET
FDB86366-F085 MOSFET 80V 110A N-Chnl PowerTrench MOSFET
FDB86363-F085 MOSFET N-Channel Power Trench MOSFET
FDB86360 Nuovo e originale
FDB86360_F085 N-CHANNEL POWERTRENCH MOSFET
FDB86366_F085 Trans MOSFET N-CH 80V 110A 3-Pin TO-263 T/R - Tape and Reel (Alt: FDB86366-F085)
FDB86360-F085-CUT TAPE Nuovo e originale
ON Semiconductor
ON Semiconductor
FDB86363-F085 MOSFET N-CH 80V 110A TO263
FDB86360-F085 MOSFET N-CH 80V 110A TO263
FDB86360_SN00307 MOSFET N-CH 80V
FDB86366-F085 N-CHANNEL POWERTRENCH MOSFET
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