 |  |  | |
| PartNumber | EFC6612R-TF | EFC6612R-A | EFC6612R-A-TF |
| Description | MOSFET NCH+NCH 23A 20V 4.4M OHM | MOSFET 2N-CH 20V 23A EFCP | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | FETs - Arrays | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | CSP-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Rds On Drain Source Resistance | 4.2 mOhms, 4.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 500 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 27 nC, 27 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Tape & Reel (TR) | Tape & Reel (TR) |
| Series | EFC6612R | - | - |
| Transistor Type | 2 N-channel | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 4.7 S, 4.7 S | - | - |
| Fall Time | 92 us, 92 us | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 640 ns, 640 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11.8 us, 11.8 us | - | - |
| Typical Turn On Delay Time | 30 ns, 30 ns | - | - |
| Package Case | - | 6-SMD, No Lead | 6-SMD, No Lead |
| Operating Temperature | - | - | - |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | 6-CSP (1.77x3.54) | 6-CSP (1.77x3.54) |
| FET Type | - | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical |
| Power Max | - | 2.5W | 2.5W |
| Drain to Source Voltage Vdss | - | - | - |
| Input Capacitance Ciss Vds | - | - | - |
| FET Feature | - | Logic Level Gate, 2.5V Drive | Logic Level Gate, 2.5V Drive |
| Current Continuous Drain Id 25°C | - | - | - |
| Rds On Max Id Vgs | - | - | - |
| Vgs th Max Id | - | - | - |
| Gate Charge Qg Vgs | - | 27nC @ 4.5V | 27nC @ 4.5V |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
ON Semiconductor |
EFC6612R-TF | MOSFET NCH+NCH 23A 20V 4.4M OHM | |
| EFC6612R-A-TF | MOSFET 2N-CH 20V 23A EFCP | ||
| EFC6612R-TF | IGBT Transistors MOSFET NCH+NCH 23A 20V 4.4M OHM | ||
| EFC6612R-A | Nuovo e originale | ||
| EFC6612R-A-TF,RN5RF28BA- | Nuovo e originale | ||
| EFC6612R-A-TF,RN5RF28BA-TR,MA8240M(TX)+ | Nuovo e originale |