 | |  | |
| PartNumber | DMN31D5L-7 | DMN31D5L-13 | DMN31D5UDA-7B |
| Description | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V | MOSFET MOSFET BVDSS: 25V-30V |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Packaging | Reel | Reel | Reel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 3000 | 10000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| RoHS | - | - | Y |
| Mounting Style | - | - | SMD/SMT |
| Package / Case | - | - | X2-DFN0806-6 |
| Number of Channels | - | - | 2 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 400 mA |
| Rds On Drain Source Resistance | - | - | 4.5 Ohms |
| Vgs th Gate Source Threshold Voltage | - | - | 400 mV |
| Vgs Gate Source Voltage | - | - | 12 V |
| Qg Gate Charge | - | - | 380 pC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 370 mW |
| Configuration | - | - | Dual |
| Channel Mode | - | - | Enhancement |
| Transistor Type | - | - | 2 N-Channel |
| Fall Time | - | - | 7.5 ns |
| Rise Time | - | - | 2.2 ns |
| Typical Turn Off Delay Time | - | - | 21 ns |
| Typical Turn On Delay Time | - | - | 3.2 ns |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN31D5UDJ-7 | MOSFET MOSFET BVDSS: 25V-30V | |
| DMN31D5L-7 | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMN31D5UFZ-7B | MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W | ||
| DMN31D6UT-13 | MOSFET MOSFETBVDSS: 25V-30V | ||
| DMN31D6UT-7 | MOSFET MOSFETBVDSS: 25V-30V | ||
| DMN31D5L-13 | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMN31D5UDA-7B | MOSFET MOSFET BVDSS: 25V-30V | ||
| DMN31D5L-13 | MOSFET BVDSS: 25V30V SOT23 T&R 10K | ||
| DMN31D5L-7 | MOSFET BVDSS: 25V30V SOT23 T&R 3K |