 |  | | |
| PartNumber | BSZ060NE2LSATMA1 | BSZ060NE2LS | BSZ060NE2LS G |
| Description | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TSDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 40 A | - | - |
| Rds On Drain Source Resistance | 6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 9.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 26 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 34 S | - | - |
| Fall Time | 1.8 ns | 1.8 nS | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.2 ns | 2.2 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11 ns | 11 nS | - |
| Typical Turn On Delay Time | 2.5 ns | - | - |
| Part # Aliases | BSZ060NE2LS BSZ6NE2LSXT SP000776122 | - | - |
| Unit Weight | 0.001245 oz | - | - |
| Series | - | OptiMOS | - |
| Part Aliases | - | BSZ060NE2LSATMA1 BSZ060NE2LSXT SP000776122 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 26 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 40 A | - |
| Vds Drain Source Breakdown Voltage | - | 26 V | - |
| Rds On Drain Source Resistance | - | 6 mOhms | - |
| Qg Gate Charge | - | 9.1 nC | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ060NE2LSATMA1 | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | |
| BSZ060NE2LSATMA1 | MOSFET N-CH 25V 12A TSDSON-8 | ||
| BSZ060NE2LS | Trans MOSFET N-CH 25V 12A 8-Pin TSDSON EP T/R | ||
| BSZ060NE2LSG | Nuovo e originale | ||
| BSZ060NE2LSATMA1-CUT TAPE | Nuovo e originale | ||
| BSZ060NE2LS G | Nuovo e originale |