BSS308PEH

BSS308PEH6327XT vs BSS308PEH6327XTSA1 vs BSS308PEH6327

 
PartNumberBSS308PEH6327XTBSS308PEH6327XTSA1BSS308PEH6327
DescriptionMOSFET P-Ch -30V -2A SOT-23-3MOSFET P-Ch -30V -2A SOT-23-3-30V,80m��,-2A P-ch Power MOSFET
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3PG-SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current2 A2 A-
Rds On Drain Source Resistance62 mOhms62 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V10 V-
Qg Gate Charge- 5 nC- 5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation500 mW (1/2 W)500 mW (1/2 W)-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101AEC-Q101-
PackagingReelReel-
Height1.1 mm1.1 mm-
Length2.9 mm2.9 mm-
SeriesBSS308BSS308-
Transistor Type1 P-Channel1 P-Channel-
Width1.3 mm1.3 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min4.6 S4.6 S-
Fall Time2.8 ns2.8 ns-
Product TypeMOSFETMOSFET-
Rise Time7.7 ns7.7 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15.3 ns15.3 ns-
Typical Turn On Delay Time5.6 ns5.6 ns-
Part # AliasesBSS308PEH6327XTSA1 SP000928942BSS308PE BSS38PEH6327XT H6327 SP000928942-
Unit Weight0.000282 oz0.000282 oz-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
BSS308PEH6327XT MOSFET P-Ch -30V -2A SOT-23-3
BSS308PEH6327XTSA1 MOSFET P-Ch -30V -2A SOT-23-3
BSS308PEH6327XTSA1 MOSFET P-CH 30V 2A SOT23
BSS308PEH6327 -30V,80m��,-2A P-ch Power MOSFET
BSS308PEH6327XTSA1-CUT TAPE Nuovo e originale
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