| PartNumber | BSR316PH6327XTSA1 | BSR316PL6327HTSA1 |
| Description | MOSFET SMALL SIGNAL+P-CH | MOSFET P-Ch -100V -360mA SOT-23-3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-SC-59-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 360 mA | 360 mA |
| Rds On Drain Source Resistance | 1.8 Ohms | 1.3 Ohms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V |
| Vgs Gate Source Voltage | 10 V | 20 V |
| Qg Gate Charge | 5.3 nC | 7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 3 mm | 3 mm |
| Product | MOSFETs | - |
| Transistor Type | 1 P-Channel | 1 P-Channel |
| Type | Small Signal Transistor | - |
| Width | 1.6 mm | 1.6 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 300 mS | 300 mS |
| Fall Time | 26 ns | 26 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 6 ns | 6 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 71 ns | 71 ns |
| Typical Turn On Delay Time | 5 ns | 5 ns |
| Part # Aliases | BSR316P H6327 SP001101034 | BSR316P BSR316PL6327XT L6327 SP000265407 |
| Unit Weight | 0.002469 oz | 0.000282 oz |
| Series | - | BSR316 |