BSP613

BSP613P H6327 vs BSP613PH6327XTSA1 vs BSP613P

 
PartNumberBSP613P H6327BSP613PH6327XTSA1BSP613P
DescriptionMOSFET P-Ch -60V -2.9A SOT-223-3MOSFET P-Ch -60V -2.9A SOT-223-3MOSFET P-CH 60V 2.9A SOT-223
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4PG-SOT-223-4-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current2.9 A2.9 A-
Rds On Drain Source Resistance130 mOhms130 mOhms-
Vgs th Gate Source Threshold Voltage2.1 V2.1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge22 nC22 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.8 W1.8 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.6 mm1.6 mm-
Length6.5 mm6.5 mm-
SeriesBSP613BSP613-
Transistor Type1 P-Channel1 P-Channel-
Width3.5 mm3.5 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min2.7 S2.7 S-
Fall Time7 ns7 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time6.7 ns6.7 ns-
Part # AliasesBSP613PH6327XTSA1 SP001058788BSP613P H6327 SP001058788-
Unit Weight0.003951 oz0.003951 oz-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
BSP613P H6327 MOSFET P-Ch -60V -2.9A SOT-223-3
BSP613PH6327XTSA1 MOSFET P-Ch -60V -2.9A SOT-223-3
BSP613P MOSFET P-CH 60V 2.9A SOT-223
BSP613PH6327XTSA1 MOSFET P-CH 60V 2.9A SOT-223
BSP613PL6327HUSA1 MOSFET P-CH 60V 2.9A SOT-223
BSP613 Nuovo e originale
BSP613P E6327 Nuovo e originale
BSP613P H6327 MOSFET P-Ch -60V -2.9A SOT-223-3
BSP613P H6327XTSA Nuovo e originale
BSP613P L6327 MOSFET P-Ch -60V 2.9A SOT-223-3
BSP613PH6327 Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP613PL6327 Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
BSP613PE6327 Nuovo e originale
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