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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSP613PL6327HUSA1 DISTI # BSP613PL6327HUSA1TR-ND | Infineon Technologies AG | MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP613PL6327HUSA1 DISTI # BSP613PL6327HUSA1CT-ND | Infineon Technologies AG | MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP613PL6327HUSA1 DISTI # BSP613PL6327HUSA1DKR-ND | Infineon Technologies AG | MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP613P L6327 DISTI # 726-BSP613PL6327 | Infineon Technologies AG | MOSFET P-Ch -60V 2.9A SOT-223-3 RoHS: Compliant | 0 | |
| BSP613PL6327HUSA1 | Infineon Technologies AG | POWER FIELD-EFFECT TRANSISTOR, 2.9A I(D), 60V, 0.13OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 500 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSP613PL6327 OMO.#: OMO-BSP613PL6327-1190 |
Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSP613PL6327HUSA1 |
MOSFET P-CH 60V 2.9A SOT-223 |
