BSM100GB120DN

BSM100GB120DN2 vs BSM100GB120DN2K vs BSM100GB120DN2HOSA1

 
PartNumberBSM100GB120DN2BSM100GB120DN2KBSM100GB120DN2HOSA1
DescriptionIGBT Modules 1200V 100A DUALIGBT Modules 1200V 100A DUALIGBT 2 MED POWER 62MM-1
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYN-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationHalf BridgeHalf Bridge-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.5 V2.5 V-
Continuous Collector Current at 25 C150 A145 A-
Gate Emitter Leakage Current200 nA400 nA-
Pd Power Dissipation800 W700 W-
Package / CaseHalf Bridge2Half Bridge1-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
Height30 mm30.5 mm-
Length106.4 mm94 mm-
Width61.4 mm34 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesBSM100GB120DN2HOSA1 SP000100720BSM100GB120DN2KHOSA1 SP000101733-
Produttore Parte # Descrizione RFQ
Infineon Technologies
Infineon Technologies
BSM100GB120DN2 IGBT Modules 1200V 100A DUAL
BSM100GB120DN2K IGBT Modules 1200V 100A DUAL
BSM100GB120DN2HOSA1 IGBT 2 MED POWER 62MM-1
BSM100GB120DN2KHOSA1 IGBT 2 MED POWER 34MM-1
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BSM100GB120DN2 IGBT Modules 1200V 100A DUAL
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BSM100GB120DN2A10 Insulated Gate Bipolar Transistor, 145A I(C), 1200V V(BR)CES, N-Channel
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BSM100GB120DN2E Nuovo e originale
BSM100GB120DN2E3238 Nuovo e originale
BSM100GB120DN2F-E3256 Nuovo e originale
BSM100GB120DN2K G Nuovo e originale
BSM100GB120DN2K. Nuovo e originale
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