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BSM100GB120DN2K

BSM100GB120DN2K
Mfr. #:
BSM100GB120DN2K
Produttore:
Infineon Technologies
Descrizione:
IGBT Modules 1200V 100A DUAL
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSM100GB120DN2K Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Moduli IGBT
RoHS:
N
Prodotto:
Moduli di silicio IGBT
Configurazione:
mezzo ponte
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.5 V
Corrente continua del collettore a 25 C:
145 A
Corrente di dispersione gate-emettitore:
400 nA
Pd - Dissipazione di potenza:
700 W
Pacchetto/custodia:
Half Bridge1
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Confezione:
Vassoio
Altezza:
30.5 mm
Lunghezza:
94 mm
Larghezza:
34 mm
Marca:
Tecnologie Infineon
Stile di montaggio:
Montaggio su telaio
Tensione massima dell'emettitore di gate:
20 V
Tipologia di prodotto:
Moduli IGBT
Quantità confezione di fabbrica:
10
sottocategoria:
IGBT
Parte # Alias:
BSM100GB120DN2KHOSA1 SP000101733
Tags
BSM100GB120DN2K, BSM100GB120DN, BSM100GB120, BSM100GB12, BSM100GB1, BSM100GB, BSM100G, BSM100, BSM10, BSM1, BSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***omponent
Eupec Infineon power module
Parte # Mfg. Descrizione Azione Prezzo
BSM100GB120DN2KHOSA1
DISTI # C1S322000658480		Infineon Technologies AGIGBT Chip3
  • 1:$156.0000
BSM100GB120DN2KHOSA1
DISTI # BSM100GB120DN2KHOSA1-ND		Infineon Technologies AGIGBT 2 MED POWER 34MM-1
RoHS: Compliant
Min Qty: 10
Container: Tray		Limited Supply - Call
  • 10:$101.4820
BSM100GB120DN2K
DISTI # BSM100GB120DN2K		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 100A nom 700W 7-Pin 94x34mm (Alt: BSM100GB120DN2K)
RoHS: Compliant
Min Qty: 10		Asia - 0
  • 10:$93.9257
  • 20:$90.0657
  • 30:$88.8487
  • 50:$85.3870
  • 100:$84.2923
  • 250:$82.1850
  • 500:$80.1805
BSM100GB120DN2KHOSA1
DISTI # BSM100GB120DN2KHOSA1		Infineon Technologies AGTrans IGBT Module N-CH 1.2kV 100A nom 700W 7-Pin 94x34mm - Trays (Alt: BSM100GB120DN2KHOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$94.6900
  • 20:$91.2900
  • 40:$87.9900
  • 60:$84.9900
  • 100:$83.4900
BSM100GB120DN2KInfineon Technologies AGInsulated Gate Bipolar Transistor, 145A I(C), 1200V V(BR)CES
RoHS: Compliant		1
  • 1000:$79.3700
  • 500:$83.5500
  • 100:$86.9800
  • 25:$90.7100
  • 1:$97.6800
BSM100GB120DN2K
DISTI # 641-BSM100GB120DN2K		Infineon Technologies AGIGBT Modules 1200V 100A DUAL
RoHS: Not compliant		0
    Immagine Parte # Descrizione
    T3400-004

    Mfr.#: T3400-004

    OMO.#: OMO-T3400-004-706

    		 Circular DIN Connectors MALE CABLE CONNECTOR 6 WAY
    Disponibilità
    Azione:
    Available
    Su ordine:
    1985
    Inserisci la quantità:
    Il prezzo attuale di BSM100GB120DN2K è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    105,20 USD
    105,20 USD
    5
    103,27 USD
    516,35 USD
    10
    98,62 USD
    986,20 USD
    25
    95,33 USD
    2 383,25 USD
    100
    88,77 USD
    8 877,00 USD
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