 | | | |
| PartNumber | BSD314SPE | BSD314SPE H6327 | BSD314SPE L6327 |
| Description | MOSFET, P-CH, AEC-Q101, 30V, -1.5A | IGBT Transistors MOSFET P-Ch -30V -1.5A SOT-363-6 | |
| Manufacturer | I | Infineon | Infineon Technologies |
| Product Category | FETs - Single | IC Chips | Transistors - FETs, MOSFETs - Single |
| Series | - | - | BSD314 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | BSD314SPEL6327HTSA1 BSD314SPEL6327XT SP000473008 |
| Unit Weight | - | - | 0.000265 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOT-363-6 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Quad Drain |
| Transistor Type | - | - | 1 P-Channel |
| Pd Power Dissipation | - | - | 500 mW |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 2.8 ns |
| Rise Time | - | - | 3.9 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | - 1.5 A |
| Vds Drain Source Breakdown Voltage | - | - | - 30 V |
| Rds On Drain Source Resistance | - | - | 140 mOhms |
| Transistor Polarity | - | - | P-Channel |
| Typical Turn Off Delay Time | - | - | 12.4 nS |
| Qg Gate Charge | - | - | - 2.9 nC |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD314SPEH6327XTSA1 | MOSFET P-Ch 30V -1.5A SOT-363-3 | |
| BSD314SPEL6327HTSA1 | MOSFET P-CH 30V 1.5A SOT363 | ||
| BSD314SPEH6327XTSA1 | IGBT Transistors MOSFET P-Ch 30V -1.5A SOT-363-3 | ||
| BSD314SPEL6327XT | Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD314SPEL6327HTSA1) | ||
| BSD314SPE | Nuovo e originale | ||
| BSD314SPE H6327 | MOSFET, P-CH, AEC-Q101, 30V, -1.5A | ||
| BSD314SPE6327 | Nuovo e originale | ||
| BSD314SPEH6327 | -30V,-1.5A,P-Ch Small-Signal MOSFET | ||
| BSD314SPEH6327XT | Nuovo e originale | ||
| BSD314SPEL6327 | Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSD314SPE L6327 | IGBT Transistors MOSFET P-Ch -30V -1.5A SOT-363-6 |