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BSD314SPEH6327XTSA1

BSD314SPEH6327XTSA1
Mfr. #:
BSD314SPEH6327XTSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors MOSFET P-Ch 30V -1.5A SOT-363-3
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BSD314SPEH6327XTSA1 Scheda dati
Consegna:
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Maggiori informazioni:
BSD314SPEH6327XTSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
Transistor - FET, MOSFET - Singoli
Serie
BSD314
Confezione
Bobina
Alias ​​parziali
BSD314SPE BSD314SPEH6327XT H6327 SP000917658
Unità di peso
0.000265 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
SOT-363-6
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 P-Channel
Pd-Power-Dissipazione
500 mW
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
2.8 ns
Ora di alzarsi
3.9 ns
Vgs-Gate-Source-Voltage
+/- 20 V
Id-Continuo-Scarico-Corrente
- 1.5 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
- 2 V
Rds-On-Drain-Source-Resistenza
230 mOhms
Polarità del transistor
Canale P
Tempo di ritardo allo spegnimento tipico
12.4 ns
Tempo di ritardo all'accensione tipico
5.1 ns
Qg-Gate-Carica
- 0.7 nC
Transconduttanza diretta-Min
3 S
Modalità canale
Aumento
Tags
BSD314SPEH, BSD314, BSD31, BSD3, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 30V 1.5A Automotive 6-Pin SOT-363 T/R
***ark
Mosfet, P-Ch, Aec-Q101, 30V, -1.5A; Transistor Polarity:p Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.107Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
Small Signal Power MOSFETs
Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More
Parte # Mfg. Descrizione Azione Prezzo
BSD314SPEH6327XTSA1
DISTI # BSD314SPEH6327XTSA1-ND		Infineon Technologies AGMOSFET P-CH 30V 1.5A SOT363
RoHS: Compliant
Min Qty: 9000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 9000:$0.1023
BSD314SPEH6327XTSA1
DISTI # BSD314SPEH6327XTSA1		Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD314SPEH6327XTSA1)
RoHS: Compliant
Min Qty: 9000
Container: Reel		Americas - 0
  • 9000:$0.0689
  • 15000:$0.0659
  • 24000:$0.0639
  • 45000:$0.0619
  • 90000:$0.0599
BSD314SPEH6327XTSA1
DISTI # BSD314SPEH6327XTSA1		Infineon Technologies AG- Tape and Reel (Alt: BSD314SPEH6327XTSA1)
RoHS: Compliant
Container: Reel		Americas - 0
    BSD314SPEH6327XTSA1
    DISTI # SP000917658    		Infineon Technologies AGTrans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R (Alt: SP000917658)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.1019
    • 6000:€0.0789
    • 12000:€0.0639
    • 18000:€0.0539
    • 30000:€0.0509
    BSD314SPEH6327XTSA1
    DISTI # 49AC0107    		Infineon Technologies AGMOSFET, P-CH, AEC-Q101, 30V, -1.5A,Transistor Polarity:P Channel,Continuous Drain Current Id:-1.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.107ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,Power RoHS Compliant: Yes8698
    • 1000:$0.1080
    • 500:$0.1200
    • 250:$0.1320
    • 100:$0.1440
    • 50:$0.1850
    • 25:$0.2250
    • 10:$0.2660
    • 1:$0.3500
    BSD314SPEH6327XTSA1
    DISTI # 726-BSD314SPEH6327XT    		Infineon Technologies AGMOSFET P-Ch 30V -1.5A SOT-363-3
    RoHS: Compliant    		1392
    • 1:$0.3400
    • 10:$0.2660
    • 100:$0.1440
    • 1000:$0.1080
    • 3000:$0.0930
    • 9000:$0.0870
    BSD314SPEH6327XTSA1
    DISTI # 2839432    		Infineon Technologies AGMOSFET, P-CH, AEC-Q101, 30V, -1.5A
    RoHS: Compliant    		8718
    • 100:£0.1400
    • 25:£0.2000
    • 5:£0.2590
    BSD314SPEH6327XTSA1
    DISTI # 2839432    		Infineon Technologies AGMOSFET, P-CH, AEC-Q101, 30V, -1.5A
    RoHS: Compliant    		8698
    • 100:$0.2790
    • 25:$0.4360
    • 5:$0.5810
    Immagine Parte # Descrizione
    BSD314SPEH6327XTSA1

    Mfr.#: BSD314SPEH6327XTSA1

    OMO.#: OMO-BSD314SPEH6327XTSA1

    		 MOSFET P-Ch 30V -1.5A SOT-363-3
    BSD314SPEL6327XT

    Mfr.#: BSD314SPEL6327XT

    OMO.#: OMO-BSD314SPEL6327XT-1190

    		 Trans MOSFET P-CH 30V 1.5A 6-Pin SOT-363 T/R - Tape and Reel (Alt: BSD314SPEL6327HTSA1)
    BSD314SPE

    Mfr.#: BSD314SPE

    OMO.#: OMO-BSD314SPE-1190

    		 Nuovo e originale
    BSD314SPE H6327

    Mfr.#: BSD314SPE H6327

    OMO.#: OMO-BSD314SPE-H6327-1190

    		 MOSFET, P-CH, AEC-Q101, 30V, -1.5A
    BSD314SPE6327

    Mfr.#: BSD314SPE6327

    OMO.#: OMO-BSD314SPE6327-1190

    		 Nuovo e originale
    BSD314SPEH6327

    Mfr.#: BSD314SPEH6327

    OMO.#: OMO-BSD314SPEH6327-1190

    		 -30V,-1.5A,P-Ch Small-Signal MOSFET
    BSD314SPEH6327XT

    Mfr.#: BSD314SPEH6327XT

    OMO.#: OMO-BSD314SPEH6327XT-1190

    		 Nuovo e originale
    BSD314SPEL6327

    Mfr.#: BSD314SPEL6327

    OMO.#: OMO-BSD314SPEL6327-1190

    		 Small Signal Field-Effect Transistor, 1.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    BSD314SPEL6327HTSA1

    Mfr.#: BSD314SPEL6327HTSA1

    OMO.#: OMO-BSD314SPEL6327HTSA1-INFINEON-TECHNOLOGIES

    		 MOSFET P-CH 30V 1.5A SOT363
    BSD314SPE L6327

    Mfr.#: BSD314SPE L6327

    OMO.#: OMO-BSD314SPE-L6327-126

    		 IGBT Transistors MOSFET P-Ch -30V -1.5A SOT-363-6
    Disponibilità
    Azione:
    Available
    Su ordine:
    3000
    Inserisci la quantità:
    Il prezzo attuale di BSD314SPEH6327XTSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,09 USD
    0,09 USD
    10
    0,09 USD
    0,85 USD
    100
    0,08 USD
    8,09 USD
    500
    0,08 USD
    38,20 USD
    1000
    0,07 USD
    71,90 USD
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