 | |  | |
| PartNumber | BSC026N08NS5ATMA1 | BSC026NE2LS5ATMA1 | BSC027N03S G |
| Description | MOSFET N-Ch 80V 100A TDSON-8 | MOSFET LV POWER MOS | MOSFET N-CH 30V 100A TDSON-8 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 25 V | - |
| Id Continuous Drain Current | 100 A | 82 A | - |
| Rds On Drain Source Resistance | 3.9 mOhms | 4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 16 V | - |
| Qg Gate Charge | 74 nC | 12 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 156 W | 29 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 60 S | 55 S | - |
| Development Kit | EVAL_1K4W_ZVS_FB_CFD7, EVAL_800W_ZVS_FB_CFD7 | - | - |
| Fall Time | 16 ns | 2 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 14 ns | 3 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 47 ns | 13 ns | - |
| Typical Turn On Delay Time | 18 ns | 3 ns | - |
| Part # Aliases | BSC026N08NS5 SP001154276 | BSC026NE2LS5 SP001212432 | - |
| Unit Weight | 0.017870 oz | - | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC027N10NS5ATMA1 | MOSFET | |
| BSC028N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| BSC027N06LS5ATMA1 | MOSFET DIFFERENTIATED MOSFETS | ||
| BSC028N06NSATMA1 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC027N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC028N06NS | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC027N04LSGATMA1 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC030N03LS G | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 | ||
| BSC026N08NS5ATMA1 | MOSFET N-Ch 80V 100A TDSON-8 | ||
| BSC028N06LS3 G | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC026NE2LS5ATMA1 | MOSFET LV POWER MOS | ||
| BSC028N06LS3GATMA1 | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 | ||
| BSC027N04LS G | Trans MOSFET N-CH 40V 24A 8-Pin TDSON | ||
| BSC027N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC028N06LS3 G | Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP | ||
| BSC028N06LS3GATMA1 | MOSFET N-CH 60V 100A TDSON-8 | ||
| BSC028N06NS | Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: BSC028N06NS) | ||
| BSC028N06NSATMA1 | MOSFET N-CH 60V 23A TDSON-8 | ||
| BSC028N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
| BSC029N025S G | MOSFET N-CH 25V 100A TDSON-8 | ||
| BSC030N03LS G | Trans MOSFET N-CH 30V 23A 8-Pin TDSON T/R (Alt: BSC030N03LS G) | ||
| BSC027N06LS5ATMA1 | MOSFET N-CH 60V 100A 8TDSON | ||
| BSC027N03S G | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC027N10NS5ATMA1 | TRENCH >=100V | ||
| BSC026NE2LS5ATMA1 | MOSFET LV POWER MOS | ||
| BSC026N08NS5ATMA1 | MOSFET N-Ch 80V 100A TDSON-8 | ||
Infineon Technologies |
BSC029N025S G | MOSFET N-Ch 25V 24A TDSON-8 | |
| BSC026N08NS5 | POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSC026NE2LS5 | Trans MOSFET N-CH 25V PG-TDSON-8 T/R (Alt: BSC026NE2LS5) | ||
| BSC027N03SG | Nuovo e originale | ||
| BSC027N04LS | Nuovo e originale | ||
| BSC027N04LSG | 24 A, 40 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC027N04LSGATMA | Nuovo e originale | ||
| BSC028N03LS | Nuovo e originale | ||
| BSC028N06LS | Nuovo e originale | ||
| BSC028N06LS3G | 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC028N06NS3G | Nuovo e originale | ||
| BSC030N03LS | Nuovo e originale | ||
| BSC027N04LS 027N04LS | Nuovo e originale | ||
| BSC027N06LS5 | Nuovo e originale | ||
| BSC028N03LSCG | Nuovo e originale | ||
| BSC028N03MSCG | Nuovo e originale | ||
| BSC028N06LS 3G | Nuovo e originale | ||
| BSC028N06LS3G , TDA6503A | Nuovo e originale | ||
| BSC029N025SGATMA1 | Nuovo e originale | ||
| BSC027N04LSGAMA1 | Nuovo e originale | ||
| BSC026NE2LS5ATMA1-CUT TAPE | Nuovo e originale | ||
| BSC027N04LSGATMA1-CUT TAPE | Nuovo e originale | ||
| BSC029N025SG | Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC030N03LSG | Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |