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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| BSC029N025S G DISTI # BSC029N025SGINTR-ND | Infineon Technologies AG | MOSFET N-CH 25V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC029N025S G DISTI # BSC029N025SGINCT-ND | Infineon Technologies AG | MOSFET N-CH 25V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC029N025S G DISTI # BSC029N025SGINDKR-ND | Infineon Technologies AG | MOSFET N-CH 25V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC029N025S G DISTI # 726-BSC029N025SG | Infineon Technologies AG | MOSFET N-Ch 25V 24A TDSON-8 RoHS: Compliant | 0 | |
| BSC029N025SG | Infineon Technologies AG | Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 8868 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: BSC029N025S G OMO.#: OMO-BSC029N025S-G |
MOSFET N-Ch 25V 24A TDSON-8 |
|
Mfr.#: BSC029N025S G |
MOSFET N-CH 25V 100A TDSON-8 |
|
Mfr.#: BSC029N025SG OMO.#: OMO-BSC029N025SG-1190 |
Power Field-Effect Transistor, 24A I(D), 25V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC029N025SGATMA1 OMO.#: OMO-BSC029N025SGATMA1-1190 |
Nuovo e originale |
