 |  | |
| PartNumber | BG3130H6327XTSA1 | BG3130H6327 |
| Description | RF MOSFET Transistors RF MOSFETS | 8V,0.025A,Dual N-channel power MOSFET |
| Manufacturer | Infineon | - |
| Product Category | RF MOSFET Transistors | - |
| RoHS | Y | - |
| Technology | Si | - |
| Package / Case | SOT-363-6 | - |
| Packaging | Reel | - |
| Series | BG3130 | - |
| Brand | Infineon Technologies | - |
| Product Type | RF MOSFET Transistors | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Part # Aliases | 3130 BG BG313H6327XT H6327 SP000753494 | - |
| Unit Weight | 0.000265 oz | - |
| Produttore | Parte # | Descrizione | RFQ |
|---|---|---|---|
Infineon Technologies |
BG3130H6327XTSA1 | RF MOSFET Transistors RF MOSFETS | |
| BG3130H6327 | 8V,0.025A,Dual N-channel power MOSFET | ||
Infineon Technologies |
BG3130H6327XTSA1 | MOSFET N-CH DUAL 8V 25MA SOT363 |