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BG3130H6327XTSA1

BG3130H6327XTSA1
Mfr. #:
BG3130H6327XTSA1
Produttore:
Infineon Technologies
Descrizione:
RF MOSFET Transistors RF MOSFETS
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
BG3130H6327XTSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BG3130H6327XTSA1 DatasheetBG3130H6327XTSA1 Datasheet (P4-P6)BG3130H6327XTSA1 Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor MOSFET RF
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
SOT-363-6
Confezione:
Bobina
Serie:
BG3130
Marca:
Tecnologie Infineon
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
3000
sottocategoria:
MOSFET
Parte # Alias:
3130 BG BG313H6327XT H6327 SP000753494
Unità di peso:
0.000265 oz
Tags
BG3130H, BG3130, BG313, BG31, BG3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 8V 0.025A 6-Pin SOT-363 T/R
***et
Transistor RF FET Dual N-CH 8V 25mA 800MHz 6-Pin SOT-363 T/R
***ineon SCT
DUAL N-Channel MOSFET Tetrode, SOT363, RoHS
***i-Key
MOSFET N-CH DUAL 8V 25MA SOT363
***ineon
DUAL N-Channel MOSFET Tetrode | Summary of Features: Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL); Two AGC amplifiers in one single package; Integrated gate protection diodes; High AGC-range, low noise figure, high gain; Improved cross modulation at gain reduction; Pb-free (RoHS compliant) package; Qualified according AEC | Target Applications: Set Top Box; TV
Parte # Mfg. Descrizione Azione Prezzo
BG3130H6327XTSA1
DISTI # BG3130H6327XTSA1TR-ND		Infineon Technologies AGMOSFET N-CH DUAL 8V 25MA SOT363
RoHS: Compliant
Min Qty: 9000
Container: Tape & Reel (TR)		Limited Supply - Call
    BG3130H6327XTSA1
    DISTI # BG3130H6327XTSA1    		Infineon Technologies AGTrans MOSFET N-CH 8V 0.025A 6-Pin SOT-363 T/R - Bulk (Alt: BG3130H6327XTSA1)
    Min Qty: 3572
    Container: Bulk    		Americas - 0
    • 35720:$0.0879
    • 17860:$0.0899
    • 10716:$0.0929
    • 7144:$0.0969
    • 3572:$0.0999
    BG 3130 H6327
    DISTI # 726-BG3130H6327    		Infineon Technologies AGRF MOSFET Transistors RF MOSFETS
    RoHS: Compliant    		2800
    • 1:$0.4200
    • 10:$0.3190
    • 100:$0.1730
    • 1000:$0.1300
    • 3000:$0.1120
    • 9000:$0.1050
    BG3130H6327XTSA1
    DISTI # 726-BG3130H6327XTSA1    		Infineon Technologies AGRF MOSFET Transistors RF MOSFETS
    RoHS: Compliant    		0
      BG3130H6327XTSA1Infineon Technologies AG 
      RoHS: Not Compliant      		6000
      • 1000:$0.0900
      • 100:$0.1000
      • 500:$0.1000
      • 1:$0.1100
      • 25:$0.1100
      Immagine Parte # Descrizione
      BG3130H6327XTSA1

      Mfr.#: BG3130H6327XTSA1

      OMO.#: OMO-BG3130H6327XTSA1

      		 RF MOSFET Transistors RF MOSFETS
      BG3130H6327

      Mfr.#: BG3130H6327

      OMO.#: OMO-BG3130H6327-1190

      		 8V,0.025A,Dual N-channel power MOSFET
      BG3130H6327XTSA1

      Mfr.#: BG3130H6327XTSA1

      OMO.#: OMO-BG3130H6327XTSA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH DUAL 8V 25MA SOT363
      Disponibilità
      Azione:
      Available
      Su ordine:
      3000
      Inserisci la quantità:
      Il prezzo attuale di BG3130H6327XTSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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