| PartNumber | AUIRF7732S2TR | AUIRF7736M2TR | AUIRF7734M2TR |
| Description | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-SC | DirectFET-M2 | DirectFET-M2 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 58 A | 108 A | 72 A |
| Rds On Drain Source Resistance | 6.6 mOhms | 3 mOhms | 3.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 16 V | 20 V | 20 V |
| Qg Gate Charge | 22 nC | 72 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 41 W | 63 W | 2.5 W |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 0.74 mm | 0.74 mm | 0.74 mm |
| Length | 4.85 mm | 6.35 mm | 6.35 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.95 mm | 3.95 mm | 3.95 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 64 S | - | - |
| Fall Time | 37 ns | 27 ns | 45 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 123 ns | 43 ns | 49 ns |
| Factory Pack Quantity | 4800 | 4800 | 4800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SP001519174 | SP001517214 | SP001522286 |
| Channel Mode | - | Enhancement | Enhancement |
| Typical Turn Off Delay Time | - | 39 ns | 42 ns |
| Typical Turn On Delay Time | - | 21 ns | 13 ns |